Internally Matched (IM) Plated Source Bridge (PSB) Power GaAs FET Achieving A High Performance Power Amplifier In X-band

Igi, S.; Kobiki, M.; Sakayori, T.; Ohashi, Masahiro; Wataze, M.; Suzuki, Toshihiro; Kusunoki, Koji

doi:10.1109/mwsym.1982.1130644

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“…On the other hand, bare die is much cheaper and more flexible to use, which make it possible to put internal matching network and load more than one transistor in the package [9][10][11], while the package parasitics need to be taken into account in order to predict the performance at microwave frequencies. It is difficult to determine the package model from measurements because the internal ports are difficult to be accessed with probe tips.…”

Section: Introductionmentioning

confidence: 99%

A 2-4 GHZ Octave Bandwidth Gan Hemt Power Amplifier With High Efficiency

Guo¹,

Chen²,

Hao-quan³

et al. 2016

PIER Letters

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Abstract-In this paper, a broadband power amplifier with high efficiency and output power based on GaN HEMT is presented. The design of broadband matching network and transistor package modeling is presented, and a simulation strategy is proposed to increase the simulation accuracy. According to measured results, the PA module shows a linear gain of 10∼13 dB during 1.9-4 GHz. The efficiency can reach 74.5%, and the maximum output power reaches 33.2 Watt. For a 5-MHz WCDMA signal, the designed power amplifier achieves an average output power above 20 W when ACLR = −30 dBc over the entire working band.

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Section: Introductionmentioning

confidence: 99%