Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

Abstract

Analysis of parasitic cyan luminescence occurring in GaInN blue light-emitting diodes J. Appl. Phys. 112, 074512 (2012) Gallium nitride-based light-emitting diodes with embedded air voids grown on Ar-implanted AlN/sapphire substrate Appl. Phys. Lett. 101, 151103 (2012) Analysis of the external and internal quantum efficiency of multi-emitter, white organic light emitting diodes

Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

“…Moreover, in these two cross-sectional TEM images [ Fig. 3(b) and 3(d)], the g vectors of samples A and B were both g= [11][12][13][14][15][16][17][18][19][20]. The edge-type dislocations were also identified in these two images, which were marked by red circles.…”

“…19 The strain distribution of the thin film structure was investigated by measuring depth resolved Raman spectra. 20 The excitation source was a 532 nm laser light and the scattered light was collected by a 100x, NA0.7 objective lens.…”

Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

“…Under the assumption that non-radiative recombinations are inactivated at cryogenic temperatures, one can retrieve the IQE from the temperature dependence of integrated PL intensity I. 26 The IQE is defined by normalizing the integrated PL intensity to 1 at 20 K, i.e., assuming the IQE to be 100 %. Thus, the IQE at room temperature will be defined FIG.…”

Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique

“…As described above, the TDDs were reduced by one order of magnitude for the LEDs with Si-HDL, resulting in much fewer non-radiative recombinations, thus the enhanced IQE. A general approach to evaluate the IQE of LEDs is to compare the integrated PL intensities obtained at low and room temperatures [27]. Fig.…”