Internal polarization electric field effects on the efficiency of InN/In<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si54.svg"><mml:mrow><mml:msub><mml:mrow/><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Ga</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>-</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>N multiple quantum dot solar cells

Summary This effort is founded on the modeling and simulation of the GaAsPN/GaP quantum dot (QD) solar cell. This quaternary alloy is one of the III‐V semiconductors, which gained importance in the recent years for optoelectronic applications. This importance comes from the fact that the quaternary GaAsPN can be a well‐grown lattice matched to GaP and Si substrates and to the bandgap that can be decreased drastically with the incorporation of nitrogen and arsenic into GaP, improving consequently the absorption and the wavelengths near the red part. These qualities make GaAsPN a good candidate for the growth on the Si substrate and low‐cost solar cell fabrication. The optical properties of GaAsPN/GaP QDs, such as strain, critical thickness, bandgap energy, the external quantum efficiency, and absorption coefficient, have been reported. The heterostructures consist of GaAs0.18P0.814N0.006 QDs separated by GaP barrier layers. The width and thickness of QDs are about 5 and 5 nm, respectively. Our results have been shown that 20 GaAs0.18P0.814N0.006/GaP QD layers produce a short‐circuit current of about 3.55 mA/cm2 and an efficiency of about 7.5%. In addition, we will be able to extend the absorption edge of a GaP solar cell from 0.48 μm to 0.5 μm for the same QD number layers inserted. The temperature effect on efficiency is considered.

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“…The absorption coefficient of the absorber layer is calculated via the model described in References 31‐34.

α_{ch} = α_{0} \sum_{k} M_{p}^{2} L ((), E_{ck} - E_{hk} - italicћω) ((), f_{h} - f_{c}),

where f c and f h are the Fermi‐Dirac functions for electrons and holes, respectively, and F ck , hk is the Fermi‐Dirac distribution function.

α_{0} = \frac{π e^{2}}{n_{r} c ε_{°} m_{0}^{2} ω}

M_{p}^{2} = \frac{{2 m}_{0}^{2}}{3 ћ^{2}} ([], 1 - \frac{m_{e}^{*}}{m_{0}}) \frac{ћ^{2} E_{g} (E_{g} + ∆_{0}}{2 m_{e}^{*} ((), E_{g} + \frac{2}{3} ∆_{so})},

where ћω is the photon energy, e and m 0 are the charge and electron mass, respectively, c is the speed of light, and n r is the refractive index.…”

Section: Theoretical Modelmentioning

confidence: 99%

Modeling and simulation of GaAsPN / GaP quantum dot structure for solar cell in intermediate band solar cell applications

Aissat

Chenini

Nacer

et al. 2021

Intl J of Energy Research

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“…We report on the electronic properties and photonic characteristics of QD-IBSCs based on these material systems and analyze their performance dependence on the QD size. Calculations are performed under the detailed balance theory [8,37,38]. This approach considers some important assumptions, which are currently challenges to the scientific community working on the experimental processing of quantum dot solar cells.…”

Section: Introductionmentioning

confidence: 99%

Parameters Optimization of Intermediate Band Solar Cells: Cases of PbTe/CdTe, PbSe/ZnTe and InN/GaN Quantum Dots

et al. 2022

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Photovoltaic cells, based on quantum dots implementation in the intrinsic region, are one of the most widely studied concepts nowadays to obtain a high solar conversion efficiency. The challenge in this third generation of solar cells is to find a good combination of materials that allows obtaining higher efficiency with low cost. In this study, we consider a juxtaposition of two kinds of quantum dots (dot/barrier) inside the I region of the PIN junction: the first combination of semiconductors includes the two configurations, PbTe/CdTe and PbSe/ZnTe, and the second combination is InN/GaN. Thus the intermediate band can be tailored by controlling the size of the dots and the inter-dot distances. The principal interest of this investigation is to determine the optimized parameters (the dot size and the inter-dot distance), leading to obtain a better solar cell efficiency. Intermediate bands, their positions, and their widths, are determined using 3D confined particles (electron and hole). Their energy levels are determined by solving the Schrödinger equation and solving the well-known dispersion relation in the Kronig–Penney model.

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“…Additionally, the polarized electric field ( P ef ) generated by the interfacial polarization charge also influences the band structure and further affects the optoelectronic properties of SLs. , Such a polarization charge effect is an effective way to promote high-efficiency p – n junction-based SLs. − In this context, the wurtzite structure of III–V nitride is a promising SL candidate owing to its considerable polarization effect. − Particularly, the InGaN/GaN multiple quantum well (MQW) SLs, with a high theoretical conversion efficiency of 50%, have attracted substantial attention for improving the conversion efficiency of InGaN/GaN MQW SLs. − The P ef generated at the InGaN/GaN interface on an N-polar (000-1) surface boosts the collection of photocreated carriers for increasing the photocurrent. − Owing to this advantage, a maximum conversion efficiency of 5.6% was achieved for N-polar InGaN/GaN SLs with appropriate In content, and a more interesting conversion efficiency of 9.82% was achieved using a triangular nanowire SL device with a set of N-polar (000-1) and semipolar (1-10-1) and (-110-1) planes . These results highlighted the improved photovoltaic performance based on the rational construction of triangular nanowire SLs; however, the underlying mechanism of P ef generation at different polar surfaces and interaction of P ef with B ef at the p – n junction remains to be understood at the atomic scale.…”

Section: Introductionmentioning

confidence: 99%

Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells

Hao

Zhang

Sun

et al. 2022

ACS Appl. Mater. Interfaces

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The model system of the InGaN/GaN quantum wells (QWs), based on the first principles calculation, was chosen to understand the underlying mechanism of interfacial polarization and its synergic effect with the built-in electric field (B ef ) at the p−n junction in solar cells (SLs). The polarized electric field (P ef ) was generated due to the redistribution of electrons and holes at the interface; moreover, the P ef of InGaN/GaN heterostructure on the semipolar (01-11) GaN surface was consistent with that of on the N-polar (000-1) surface, which is on the lines of the B ef and favors the electron−hole separation efficiency in SLs. Furthermore, the growth of high-quality InGaN/GaN QWs on the semipolar (01-11) GaN surface was achieved. Such an atomic-scale investigation provides a fundamental understanding of the polarization chargeinduced P ef and its interaction coupling with B ef at the p−n junction, which could be generalized to polar material-based SLs.

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Internal polarization electric field effects on the efficiency of InN/InxGa1-xN multiple quantum dot solar cells

Cited by 20 publications

References 20 publications

Modeling and simulation of GaAsPN / GaP quantum dot structure for solar cell in intermediate band solar cell applications

Modeling and simulation of GaAsPN / GaP quantum dot structure for solar cell in intermediate band solar cell applications

Parameters Optimization of Intermediate Band Solar Cells: Cases of PbTe/CdTe, PbSe/ZnTe and InN/GaN Quantum Dots

Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells

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