Internal friction and electrical resistivity measurements in CU and AG alloys after neutron irradiation at low temperature

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The experimental results presented in the preceding paper are discussed. From internal friction measurements of Cu‐Be, Ag alloys with undersized solute atoms, the stable interstitial‐solute atom complexes are considered to annihilate at stage III without giving rise the relaxation peak. This complex seems to be impossible to move by the cage motion. For CuAg, AgSb, AgPb, and AgGe with oversized solute atoms, the relaxation peak is probably due to the typeb interstitial‐solute atom complex. For CuSn, CuMg, CuGe, CuSi, AgSn, AgIn, and AgCd, however, the relaxation peak due to the single interstitial‐solute atom complex seems not to appear.

Section: Introductionmentioning

confidence: 99%

Internal friction and electrical resistivity measurements in Cu and Ag alloys after neutron irradiation at low temperature II. Disscussion

Takamura¹,

Kobiyama²

1985

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Effect of low-temperature deformation on internal friction peaks of irradiated Al alloys

Takamura¹,

Kobiyama

1986

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The effect of deformation after fast neutron irradiation at low temperatures on the internal friction peaks is studied. The peak height in internal friction is reduced largely by deformation. The degree of reduction in the peak height with increasing degree of deformation is similar for each peak. The strain field of moving dislocations may be able to transform interstitial–solute complexes into ones having a configuration that does not give rise the relaxation peaks.

Dislocation pinning in Al and Ag alloys after low-temperature deformation

Takamura¹,

Kobiyama

1986

Self Cite

Elastic modulus and resistivity isochronal annealing measurements in dilute Al and Ag alloys are made after deformation at 77 K. The resistivity annealing stages are situated around 90 and 230 K in Al alloys and around 110 and 240 K in Ag alloys. An increase of the elastic modulus is induced by dislocation pinning. In Al alloys, a large pinning stage is observed around 180 K. In AlSn, AlIn, and AlGe, a pinning stage is also observed around 230 K. The dislocation pinning is discussed.