Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series

Hardtdegen, Alexander; Torre, Camilla La; Zhang, Hehe; Funck, Carsten; Menzel, Stephan; Waser, Rainer; Hoffmann‐Eifert, Susanne

doi:10.1109/imw.2016.7495280

Cited by 19 publications

(10 citation statements)

References 11 publications

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“…For clarity, the electroforming I-V curves were not included in these graphs, but they showed typical electroforming behaviors in the ECM cells with an abrupt increase in the current at the electroforming voltages ( Figure S1a,b, Supporting Information). [38,39] Nonetheless, such model may not be applicable to the present case as the possible series resistance from contact of the measurement setup was negligible (only ≈2 Ohm). In Figure 1a, the sample shows the typical BRS switching behavior, where set and reset occur in the negative-and positive-bias regions, respectively, which can be well explained by the conventional ECM theory, i.e., the Cu atoms in the bottom Cu electrode are ionized and migrated toward the Pt top electrode and are reduced at the Pt/TiO 2 interface forming the Cu CF protruding from the Pt/TiO 2 interface to the Cu/TiO 2 interface.…”

Section: Introductionmentioning

confidence: 97%

Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO₂/Cu Electrochemical Metallization Device

Kim

Yoon

Park

et al. 2017

Adv Elect Materials

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and rupture of the metallic conducting filament (CF) composed of active metal atoms, typically Ag and Cu, are responsible for the resistance switching. Unlike other resistive switching devices, the active metal constitutes one of the electrodes which is critically involved in the redox reaction of CF formation and rupture in ECM devices. According to the conventional ECM theory, the cations generated from the anode (active metal) migrate through the solid electrolyte layer when a positive bias is applied to the active metal electrode. The migrated metal cations receive electrons at the cathode (inert metal)/electrolyte interface, and are reduced to metal atoms forming the growing CF. After a series of reduction processes, metallic CF(s) is (are) formed, and current flows through them, thus, the device resistance state becomes a low resistance state (LRS), which corresponds to set switching. When the bias polarity is reversed, a reverse reaction occurs, and the device turns back to a high resistance state (HRS), which is most probably mediated by the oxidation of the metal atoms at the filament tip near the active metal electrode. This corresponds to reset switching. In this conventional ECM model based on the redox reaction of active metal atoms, the idea that a conical-shaped filament grows from the cathode/ electrolyte interface toward the active electrode (anode) and that ECM devices show bipolar resistive switching (BRS) has been widely accepted. [6,7] However, counterarguments against the conventional ECM filament forming theory, covering not only the reset polarity but also the filament geometry, have been discovered in recent years. [8,9] These studies revealed that the filament growth can be extensively influenced by the detailed material parameters, such as the type of electrolyte materials as well as the cation/electron mobility and its redox rate. [9][10][11][12][13] With the aid of in situ transmission electron microscopy (TEM) and conductive atomic force microscopy techniques, real-time image of growth and rupture of conducting filament have been reported. [14,15] These factors contribute not only to the initiation location of the filament growth but also to the consequent shape of the grown filament. In addition, studies objecting to the incumbent ECM reset mechanism theory have been reported recently. According to the conventional ECM theory, due to its redox reaction based characteristics, only bipolarThe electrochemical metallization (ECM) cell is a feasible contender for high density resistance switching random access memory or neuromorphic devices. This work elucidates the detailed switching model based on the Cu conducting filament (CF) configuration and the interplay between the Joule heating and electric field effects in the Pt/TiO 2 /Cu ECM cell, which can explain the switching behaviors both in accordance and discordance with the conventional ECM theory. The Cu CF configuration is varied from the conventional conical one for a small compliance current (I cc , ≈1 mA) to the hourglass or eve...

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Section: Introductionmentioning

confidence: 97%

Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO₂/Cu Electrochemical Metallization Device

Kim

Yoon

Park

et al. 2017

Adv Elect Materials

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“…the ion/vacancy displacements [21]. This indicates that R S or at least part of R S is associated with the filamentary structure itself [16] and should not be regarded as a completely external artifact [15]. Finally, Fig.…”

Section: Devices and Experimental Detailsmentioning

confidence: 83%

Understanding the Input Signal Frequency Effects on the Resistive Window of Memristors

Izquierdo¹,

González²,

Campabadal³

et al. 2020

Preprint

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As theoretically predicted by Prof. Chua, the input signal frequency has a major impact on the electrical behavior of memristors. According with one of the so-called fingerprints of such devices, the resistive window, <i>i.e.</i> the difference between the low and high resistance states, shrinks as the frequency increases for a given input signal amplitude. Physically, this effect stems from the incapability of ions/vacancies to follow the external electrical stimulus. In terms of the electrical behavior, the collapse of the resistive window can be ascribed to the shift of the set/reset voltages toward higher values. Moreover, for a given frequency, the resistance window increases with the signal amplitude. In this letter, we show that both phenomena are the two sides of the same coin and that can be consistently explained after considering the snapback effect and a balance model equation for the device memory state.

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“…Hence, the trade-off between short retention and synaptic plasticity should be carefully managed to fit with the desired application. Third, the cycle-to-cycle operation can promote internal cell resistance variability that degenerates the analog behavior and could lead to the occurrence of digital switching [32]. Analog devices made with interfacial layer techniques may suffer from this problem due to the repeated redox reactions at the interfacial layer.…”

Section: Discussionmentioning

confidence: 99%

Practical Approach to Induce Analog Switching Behavior in Memristive Devices: Digital-to-Analog Transformation

Simanjuntak¹,

Chandrasekaran²,

Panda³

et al. 2021

Memristor - An Emerging Device for Post-Moore’s Computing and Applications

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The capability of memristor devices to perform weight changes upon electrical pulses mimics the analogous firing mechanism in biological synapses. This capability delivers the potential for neuromorphic computing and pushes renewed interests in fabricating memristor with analog characteristics. Nevertheless, memristors could often exhibit digital switching, either during the set, reset, or both processes that degenerate their synaptic capability, and nanodevice engineers struggle to redesign the device to achieved analog switching. This chapter overviews some important techniques to transform the switching characteristics from digital to analog in valence change and electrochemical metallization types memristors. We cover physical dynamics involving interfacial diffusion, interfacial layer, barrier layer, deposition, and electrode engineering that can induce digital-to-analog switching transformation in memristor devices.

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Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series

Cited by 19 publications

References 11 publications

Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO₂/Cu Electrochemical Metallization Device

Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO₂/Cu Electrochemical Metallization Device

Understanding the Input Signal Frequency Effects on the Resistive Window of Memristors

Practical Approach to Induce Analog Switching Behavior in Memristive Devices: Digital-to-Analog Transformation

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Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series

Cited by 19 publications

References 11 publications

Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO2/Cu Electrochemical Metallization Device

Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO2/Cu Electrochemical Metallization Device

Understanding the Input Signal Frequency Effects on the Resistive Window of Memristors

Practical Approach to Induce Analog Switching Behavior in Memristive Devices: Digital-to-Analog Transformation

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Product

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Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO₂/Cu Electrochemical Metallization Device

Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO₂/Cu Electrochemical Metallization Device