1968
DOI: 10.1109/proc.1968.6146
|View full text |Cite
|
Sign up to set email alerts
|

Intermodulation products generated by a p-i-n diode switch

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

1969
1969
2009
2009

Publication Types

Select...
4
2

Relationship

0
6

Authors

Journals

citations
Cited by 6 publications
(2 citation statements)
references
References 1 publication
0
2
0
Order By: Relevance
“…This value was adopted as the criterion for the switch design. 15,16,17 As indicated in Sec. III-B, if the diode is not located at the junction, the RF voltage across the diode is not the same as the RF voltage on the line.…”
Section: A Generalmentioning
confidence: 92%
“…This value was adopted as the criterion for the switch design. 15,16,17 As indicated in Sec. III-B, if the diode is not located at the junction, the RF voltage across the diode is not the same as the RF voltage on the line.…”
Section: A Generalmentioning
confidence: 92%
“…For applications requiring VET or RET antennas, electromechanical phase shifters are preferentially implemented due 1 LME Cash Buyer Price: 4858.50 US$/tonne on 6 th July 2009, 1595.00 US$/tonne on 6 h July 1998. to the poor power handling and poor 3 rd order intermodulation products associated with PIN diode solutions [16].…”
Section: E Antenna Beam Steeringmentioning
confidence: 99%