Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers

Abstract

Various approaches can be used to selectively control the amount of intermixing in III-V quantum well and quantum dot structures. Impurity-free vacancy disordering is one technique that is favored for its simplicity, however this mechanism is sensitive to many experimental parameters. In this study, a series of silicon oxynitride capping layers have been used in the intermixing of InGaAs/ GaAs quantum well and quantum dot structures. These thin films were deposited by sputter deposition in order to minimize the incorporation of hydrogen, which has been reported to influence impurity-free vacancy disordering. The degree of intermixing was probed by photoluminescence spectroscopy and this is discussed with respect to the properties of the SiO x N y films. This work was also designed to monitor any additional intermixing that might be attributed to the sputtering process. In addition, the high-temperature stress is known to affect the group-III vacancy concentration, which is central to the intermixing process. This stress was directly measured and the experimental values are compared with an elastic-deformation model. V

Dynamics of Vacancy Formation and Distribution in Semiconductor Heterostructures: Effect of Thermally Generated Intrinsic Electrons

“…The main paths are generation at the surface (Schottky defect formation) and generation in the volume (Frenkel pair formation). In the first case, to consider the vacancy formation, it is necessary to take into account the state of the surface (e.g., the coating type and structure [ 34 , 35 , 36 , 37 , 38 ]) and the free surface exchange by atoms and molecules with the environment [ 39 , 40 , 41 , 42 ]. For most semiconductor materials, spontaneous Frenkel pair formation is considered an unlikely source of vacancies thanks to the high energy of forming two defects as a tight pair.…”

Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures

“…The main paths are a generation at the surface (Schottky defect formation) and in the volume (Frenkel pair formation). In the first case, to consider the vacancy formation, it is necessary to take into account the surface structure [ 42 , 43 , 44 , 45 , 46 ] and the free surface exchange by atoms and molecules with the environment [ 28 , 47 , 48 , 49 ]. Frenkel pair formation is considered an unlikely source of vacancies for most semiconductor materials due to the high formation energy.…”

XXVII Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 13-16 марта 2023 г. Формирование заряженных вакансий в анионной подрешетке AlAs

“…Нанофизика и наноэлектроника" тия [20][21][22]), а также обмен атомами и молекулами свободной поверхности с окружающей средой [14,17,23,24]. В объемном кристалле динамику формирования вакансий можно описать кинетическим уравнением [13]:…”