Intermixing of Al<i>x</i>Ga1−<i>x</i>As/GaAs superlattices by pulsed laser irradiation

Ralston, John; Moretti, A. L.; Jain, R. K.; Chambers, F. A.

doi:10.1063/1.97707

Cited by 68 publications

(9 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…There is also an increasing interest in QWI induced with powerful lasers ͑laser QWI͒. Lasers, such as KrF excimer (ϭ248 nm), Ar ion (ϭ514.5 nm), and Nd:YAG (ϭ1064 nm) have been successfully applied for the purpose of demonstrating QWI in microstructures consisting of GaAs/AlGaAs, [2][3][4] InP/GaInAs, 5,6 GaInP/AlGaInP, 7 and Si/SiGe. 8 Recently, we have also successfully applied the laser-based intermixing technique for InAs/GaAs quantum dot intermixing.…”

Section: Introductionmentioning

confidence: 99%

Monolithic multiple wavelength ridge waveguide laser array fabricated by Nd:YAG laser-induced quantum well intermixing

Dubowski

Feng

Poole

et al. 2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Maskless selective area cw Nd:YAG laser annealing of GaInAsP/InP quantum well (QW) structures has been investigated as a possible route towards the fabrication of monolithically integrated photonic circuits. Laser irradiation of a 5 QW laser structure, originally designed for lasers emitting at 1.52 μm, yielded material having a continuously changing band gap ranging from 1.52 to 1.4 μm over the distance of about 3 mm. Bars with arrays of ridge waveguide lasers, having cavity lengths from 300 to 600 μm, were fabricated from the processed material. An individual bar, 2–3 mm long, comprised lasers operating typically between 1.4 and 1.52 μm. The lasers showed stable threshold current density and high quantum efficiency at all operating wavelengths. The results indicate that the applied approach has the potential to realize the cost-effective fabrication of advanced photonic devices and photonic integrated circuits.

show abstract

Section: Introductionmentioning

confidence: 99%

Monolithic multiple wavelength ridge waveguide laser array fabricated by Nd:YAG laser-induced quantum well intermixing

Dubowski

Feng

Poole

et al. 2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

show abstract

“…The post-growth modification of the optical properties of QWs is a very promising technique for the realization of monolithically integrated devices. To date, a number of QWI techniques have been reported including impurity-induced disordering [5], impurity-free vacancy-induced disordering [6], ion implantation-induced inter-diffusion [7], and several laser-induced disordering processes [8]. Impurity-free vacancy-induced disordering is usually implemented by the deposition of a dielectric film coating followed by a rapid thermal annealing.…”

Section: Introductionmentioning

confidence: 99%

All-optical switching and wavelength conversion using passive nonlinearities in semiconductor quantum wells

Nah

LiKamWa

2006

SPIE Proceedings

View full text Add to dashboard Cite

A silica capped impurity-free vacancy induced disordering has been used in the fabrication of an all-optical integrated Mach-Zehnder switch incorporating a linear waveguide directional coupler with nonlinear multiple quantum well (MQW) sections. Using the switch we have been able to demonstrate all-optical wavelength conversions at a rate of 1GHz that was limited by our laser source, a modelocked erbium doped fiber laser. In principle the device performance is expected to be undiminished up to repetition rates of 10Gb/s and higher.

show abstract

“…Laser beam induced disordering", impurity induced disordering", impurity-free vacancy diffusion 7 9 and ion implantation enhanced interdiffusionI°- 3 have been successfully applied to mix superlattices and single quantum wells.…”

Section: Introductionmentioning

confidence: 99%

GaAs/AlGaAs Quantum Well Mixing Using Low Energy Ion Implantation and Rapid Thermal Annealing

Elman¹,

Köteles²,

Melman³

et al. 1988

MRS Proc.

View full text Add to dashboard Cite

Low energy ion implantation followed by rapid thermal annealing (RTA) was utilized to modify exciton transition energies of MBE-rown GaAs/AlGaAs quantum wells (QW). The samples were irradiated with an 75As ion beam with an energy low enough that the depth of the disordered region was spatially separated from the QWs.After RTA, exciton energies (determined using optical spectroscopy) showed large increases which were dependent on QW widths and the implantation fluence with no significant increases in peak linewidths. These energy shifts were interpreted as resulting from the modification of the shapes of the as-grown QWs from square (abrupt interfaces) to rounded due to enhanced Ga and Al interdiffusion in irradiated areas. These results are similar to our data on the RTA of the same structures capped with SiO 2 and are consistent with the model of enhanced intermixing of Al and Ga atoms due to diffusion of vacancies generated near the surface.

show abstract

Intermixing of AlxGa1−xAs/GaAs superlattices by pulsed laser irradiation

Cited by 68 publications

References 12 publications

Monolithic multiple wavelength ridge waveguide laser array fabricated by Nd:YAG laser-induced quantum well intermixing

Monolithic multiple wavelength ridge waveguide laser array fabricated by Nd:YAG laser-induced quantum well intermixing

All-optical switching and wavelength conversion using passive nonlinearities in semiconductor quantum wells

GaAs/AlGaAs Quantum Well Mixing Using Low Energy Ion Implantation and Rapid Thermal Annealing

Contact Info

Product

Resources

About