“…Nonetheless, the built-up of diamond films on WC-Co substrates is quite tricky because of the harmful effects of Co binder, which leads to the formation of a graphitic carbon layer at the substrate surface during the early stages of deposition, on which diamond grows later [3]. Mostly, the problem is overtaken by covering the WCCo substrate with interlayers, which act as diffusion barrier [4], etching the WC-Co substrate surface to wash superficial Co out [5], and decarburizing the substrate surface after the etching of binder [6]. In each case, a seeding process with diamond nucleation promoters and a roughening of the substrate surface are strongly required to improve the built-up of the diamond film and increase the interface contact area [7], hence speeding up the formation of a continuous film and enhancing the adhesion between the incoming diamond film and the hardmetal.…”