2017
DOI: 10.1002/advs.201700086
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Interlayer‐State‐Coupling Dependent Ultrafast Charge Transfer in MoS2/WS2 Bilayers

Abstract: Light‐induced interlayer ultrafast charge transfer in 2D heterostructures provides a new platform for optoelectronic and photovoltaic applications. The charge separation process is generally hypothesized to be dependent on the interlayer stackings and interactions, however, the quantitative characteristic and detailed mechanism remain elusive. Here, a systematical study on the interlayer charge transfer in model MoS2/WS2 bilayer system with variable stacking configurations by time‐dependent density functional … Show more

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Cited by 91 publications
(99 citation statements)
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“…Future experiments include gating the heterostructures with controlled carrier densities and spectrally separated excitonic resonances to further clarify their roles in exciton dephasing and population relaxation[17,74]. Also, previous studies about the ultrafast charge transfer between layers within the MoS2/WS2 heterostructures reveal the fs scale dynamics which can be tuned significantly by changing stacking configuration[53,[63][64]. So future ultrafast pump-probe spectroscopy experiment on our trilayer compared with the bilayer heterostructure can be an interesting topic about the effect of extra WSe2 layer, inducing its stacking configuration, on the charge transfer dynamics.…”
mentioning
confidence: 90%
“…Future experiments include gating the heterostructures with controlled carrier densities and spectrally separated excitonic resonances to further clarify their roles in exciton dephasing and population relaxation[17,74]. Also, previous studies about the ultrafast charge transfer between layers within the MoS2/WS2 heterostructures reveal the fs scale dynamics which can be tuned significantly by changing stacking configuration[53,[63][64]. So future ultrafast pump-probe spectroscopy experiment on our trilayer compared with the bilayer heterostructure can be an interesting topic about the effect of extra WSe2 layer, inducing its stacking configuration, on the charge transfer dynamics.…”
mentioning
confidence: 90%
“…[1][2][3][4] Due to their importance, considerable efforts were made to investigate the photoinduced charge transfer dynamics of these materials from the theoretical point of view. 3,[5][6][7][8][9][10][11] For example, transition-metal dichalcoge nide (TMD) van der Waals heterostructures MoS2/WS2 attracted tremendous interests due to their potential applicability as optoelectronic and solar energy conversion devices. [1][2][3][4][12][13][14][15] By using photoluminescence and femtosecond pump-probe measurements, Hong et al 12 found that the hole transfer in MoS2/WS2 was at the femtosecond scale (50 fs), indicating it is a promising candidate for optoelectronic and photovoltaic applicatio ns.…”
Section: Tocmentioning
confidence: 99%
“…The ultrafast charge transfer at TMD heterostructure interface has been further convinced by other experiments. [13][14][15] This process has also been investigated by different theoretical simulations 3,[5][6][7][8][9][10][11] . For example, Zheng et al 6 used ab initio nonadiabatic molecular dynamics based on time-dependent Kohn-Sham equation and surface hopping method to show that the ultrafast interlayer hole transfer is strongly promoted by an adiabatic mechanism through phonon excitation occurring on 20 fs, which is consistent with the experimental results.…”
Section: Tocmentioning
confidence: 99%
“…Since the charge carrier transfer occurs mainly due to the overlap of interlayer states, photoexcitation charge carrier transfer dynamics certainly shows dependence on the interlayer stacking orders (twisting, translation and spacing) and interactions. Recent results on the basis of TDDFT demonstrate that specific interlayer registry between MoS 2 and WS 2 can significantly modulate the interlayer charge transfer, in particular, changes the time scale from 100 to 1,000 fs . It was further unraveled that the transfer rate is governed by the coupling between specific interlayer states, instead of the overall interlayer coupling strength.…”
Section: Photoexcitation Dynamics Of Chargr Carriersmentioning
confidence: 99%