Interlayer Coupling Induced Infrared Response in WS 2 /MoS 2 Heterostructures Enhanced by Surface Plasmon Resonance

Zhang

Gao

et al. 2019

Small

Self Cite

142

Infrared (IR) photodetectors are finding diverse applications in imaging, information communication, military, etc. 2D metal chalcogenides (2DMCs) have attracted increasing interest in view of their unique structures and extraordinary physical properties. They have demonstrated outstanding IR detection performance including high responsivity and detectivity, high on/off ratio, fast response rate, stable room temperature operability, and good mechanical flexibility, which has opened up a new prospect in next‐generation IR photodetectors. This Review presents a comprehensive summary of recent progress in advanced IR photodetectors based on 2DMCs. The rationale of the photodetectors containing photocurrent generation mechanisms and performance parameters are briefly introduced. The device performances of 2DMCs‐based IR photodetectors are also systematically summarized, and some representative achievements are highlighted as well. Finally, conclusions and outlooks are delivered as a guideline for this thriving field.

Section: Hybrid Heterostructures Based On 2d Metal Chalcogenides For mentioning

confidence: 99%

Section: Hybrid Heterostructures Based On 2d Metal Chalcogenides For mentioning

confidence: 99%

2D Metal Chalcogenides for IR Photodetection

Zhang

Gao

et al. 2019

Small

Self Cite

142

“…In addition to mechanically exfoliated nanosheets, materials prepared with chemical vapor deposition (CVD) can also be manually stacked . Many heterostructures have been produced, such as MoS 2 /WS 2 , graphene/MoS 2 , MoSe 2 /graphene, and MoS 2 /WSe 2 , for flexible IR photodetectors and image sensor arrays.…”

Section: Production Of 2dhsmentioning

confidence: 99%

“…In recent years, SPR effect‐modified photodetectors have attracted many interest for their enhanced light absorption and detection sensitivity . Wu et al designed 2D + 0D photodetectors based on Ag shell‐isolated nanoparticles (SHIN)‐decorated MoS 2 .…”

Section: Two‐dimensional Heterostructuresmentioning

confidence: 99%

Two‐dimensional heterostructure promoted infrared photodetection devices

Rao

et al. 2019

InfoMat

116

It is a rapidly developed subject in expanding the fundamental properties and application of two‐dimensional (2D) materials. The weak van der Waals interaction in 2D materials inspired researchers to explore 2D heterostructures (2DHs) based broadband photodetectors in the far‐infrared (IR) and middle‐IR regions with high response and high detectivity. This review focuses on the strategy and motivation of designing 2DHs based high‐performance IR photodetectors, which provides a wide view of this field and new expectation for advanced photodetectors. First, the photocarriers' generation mechanism and frequently employed device structures are presented. Then, the 2DHs are divided into semimetal/semiconductor 2DHs, semiconductor/semiconductor 2DHs, and multidimensional semi‐2DHs; the advantages, motivation, mechanism, recent progress, and outlook are discussed. Finally, the challenges for next‐generation photodetectors are described for this rapidly developing field.

“…Very recently, Wu et al demonstrated a 16.2 nm MoS 2 phototransistor with a extended detection wavelength to 1550 nm . According to the reported features, MoS 2 always incorporates with other TMDs to form a Schottky Junction to realize high performance devices …”

Section: Introductionmentioning

confidence: 99%

Design strategies for two‐dimensional material photodetectors to enhance device performance

Han

Chen

et al. 2019

InfoMat

193

143

Two‐dimensional (2D) materials are intensively attractive for fabricating high sensitive photodetectors in terms of atomically thin flexible and ultrafast charge transport feature. Due to their atomically thin body, designing high performance detector requires new physical mechanisms and device structures. In this review, we classify design strategies and device structures into four categories depending on their physical mechanisms (photovoltaic effect, photoconductive effect, photothermoelectric effect or photobolometric effect, and surface plasma‐ wave‐assisted effect), and summarize the device performances. Finally, future prospects and development direction for 2D material photodetectors are described. Those design strategies descriptions about photoelectronic detector provide a reference for high responsivity and fast response speed photodetector at broadband sensing in the future.