Interferometric optical gyroscope based on an integrated silica waveguide coil with low loss

Liu, Danni; Li, Hui; Wang, Xiao; Liu, Huilan; Ni, Peiren; Liu, Ning; Feng, Lishuang

doi:10.1364/oe.392510

Cited by 22 publications

(11 citation statements)

References 24 publications

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“…Although 30 kHz bandwidth is not enough for fiber communication system, the Er/O photodetectors may find applications as integrated optic sensors. [39] Waveguide-based optical sensors are used in a variety of applications such as label-free detection of chemical [40] or integrated interferometric optical gyroscopes for navigation, [41,42] in which high frequency is not a critical factor.…”

Section: Resultsmentioning

confidence: 99%

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Efficient Er/O Doped Silicon Photodiodes at Communication Wavelengths by Deep Cooling

Zhao

Lin

Gao

et al. 2021

Adv Materials Technologies

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However, the spectral responses of silicon photodiodes are limited to wavelengths shorter than 1.1 µm, significantly shorter than communication wavelengths (≈1.55 µm). Approaches have been explored to extend the spectral range of silicon-based photodetectors to communication wavelengths. One involves incorporating chalcogen dopants into Si through picosecond or femtosecond laser irradiation. [19][20][21][22] Although the room temperature responsivity of 35 mA W −1 at 1550 nm was achieved using this process, it is not suitable for the integrated circuit application due to the complicated laser annealing process and the noncrystalline Si surface formed in the process. [20,23] Recently, pulsed laser treatment using nanosecond laser has been reported to form singlecrystalline surface on gold ion doped silicon. The resultant Si:Au photodiodes have the maximum room temperature EQE of 9.3 × 10 −5 at communication wavelengths. [24] Nevertheless, Au is an important detrimental elements to silicon-based devices and therefore incompatible with the CMOS process. [25,26] Although silicon hyper doped with silver was made into photodiodes, [27] doping silicon with erbium (often with oxygen) [28][29][30] is particularly interesting for photodetection since Er/O doped silicon can be also potentially made into silicon light sources at communication wavelength. [31][32][33][34][35] Traditionally, Er/O doped silicon suffers from Er/O precipitation after standard rapid thermal annealing (RTA), which results in strong nonradiative recombination. [36][37][38] Consequently, the RTA-treated Er/O silicon cannot emit or detect photons at communication wavelengths efficiently at room temperature. [28,36] Recently, we employed a deep cooling (DC) process to treat the Er/O implanted silicon. [31] The processed samples exhibit a strong photoluminescence at room temperature, two orders of magnitude higher than the samples treated by standard RTA process. In this work, we explore the possibility to use Er/O doped silicon treated by the DC process for high-performance photodetection at communication wavelengths. The samples were first annealed at high-temperature (≈950 °C) and cooled Wide band infrared photodetectors have found a wide range of applications in sensing, communication, and spectral analysis. However, the commonly used infrared photodetectors are based on Ge and III-V semiconductors which are not complementary metal-oxide-semiconductor (CMOS) compatible and therefore have limited applications. There is a huge demand for silicon-based infrared photodetectors due to its low-cost and compatibility with CMOS processes. Nevertheless, the spectral bandwidth of Si photodetectors is limited to wavelengths below 1.1 µm. Several approaches are developed to extend Si photodetection bandwidth to communication wavelengths. Er/O doped Si is a promising approach which, however, suffers from low infrared responsivities at room temperature when the samples are treated with the standard rapid thermal annealing (RTA). In this work, a novel deep cooling...

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Section: Resultsmentioning

confidence: 99%

“…After the process, the Er/O doped Si is further made into a Si waveguide photodiode for the potential applications as integrated optic sensors [39,40] and integrated interferometric optical gyroscopes. [41,42]…”

Section: Introductionmentioning

confidence: 99%

Efficient Er/O Doped Silicon Photodiodes at Communication Wavelengths by Deep Cooling

Zhao

Lin

Gao

et al. 2021

Adv Materials Technologies

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“…In contrast to the use of long coiled waveguides as sensing modules in integrated IOGs, the sensing modules in integrated PROGs are implemented by passive resonators, thus allowing for more compact device footprint. Moreover, unlike the IOGs with their sensitivities being restricted by the transmission loss of the long coiled waveguides, the PROGs based on high-Q optical resonators show advantages in achieving high sensitivities [129,132,145]. Figure 12 shows several typical integrated PROGs.…”

Section: B Passive Resonant Optical Gyroscopes (Progs)mentioning

confidence: 99%

Integrated photonic chips based on Sagnac interference

Juodkazis¹,

Moss²,

Wu³

et al. 2023

Preprint

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As a fundamental optical approach to interferometry, Sagnac interference has been widely used for reflection manipulation, precision measurements, and spectral engineering in optical systems. Compared to other interferometry configurations, it offers attractive advantages by yielding a reduced system complexity without the need for phase control between different pathways, thus offering a high degree of stability against external disturbance and a low wavelength dependence. The advance of integration fabrication techniques has enabled chip-scale Sagnac interferometers with greatly reduced footprint and improved scalability compared to more conventional approaches implemented by spatial light or optical fiber devices. This facilitates a variety of integrated photonic devices with bidirectional light propagation, showing new features and capabilities compared to unidirectional-light-propagation devices such as Mach-Zehnder interferometers (MZIs) and ring resonators (RRs). This paper reviews functional integrated photonic devices based on Sagnac interference. First, the basic theory of integrated Sagnac interference devices is introduced, together with comparisons to other integrated photonic building blocks such as MZIs, RRs, photonic crystal cavities, and Bragg gratings. Next, the applications of Sagnac interference in integrated photonics, including reflection mirrors, optical gyroscopes, basic filters, wavelength (de)interleavers, optical analogues of quantum physics, and others, are systematically reviewed. Finally, the open challenges and future perspectives are discussed.

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“…Its accuracy and stability affect the performance of INS. There are many kinds of gyroscopes, including mechanical rotor gyroscope, quartz gyroscope, laser gyroscope, fiber optic gyroscope, electrostatic gyroscope and so on [2]. In recent years, with the rapid development of fiber optic gyro technology, it has been widely used in the field of low -precision inertial navigation.…”

Section: Introductionmentioning

confidence: 99%

New optical suppression technology of relative intensity noise for fiber optic gyroscope

Zhang¹,

Hu²,

Zheng³

et al. 2023

AOPC 2022: Optical Sensing, Imaging, and Display Technology

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This paper reports a new optical suppression method of fiber optic gyroscope and its relative intensity noise. Using the optimal design of all fiber devices, the re lative intensity noise of light source is suppressed at low cost without changing the circuit and algorithm, and the signal -to-noise ratio of gyroscope is improved. The accuracy of fiber optic gyroscope can be improved by 12%, which is very suitable for the performance improvement of fiber optic gyroscope .

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Interferometric optical gyroscope based on an integrated silica waveguide coil with low loss

Cited by 22 publications

References 24 publications

Efficient Er/O Doped Silicon Photodiodes at Communication Wavelengths by Deep Cooling

Efficient Er/O Doped Silicon Photodiodes at Communication Wavelengths by Deep Cooling

Integrated photonic chips based on Sagnac interference

New optical suppression technology of relative intensity noise for fiber optic gyroscope

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