Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures

Avakyants, L. P.; Bokov, P. Yu.; Chervyakov, А. V.; Chuyas, A.V.; Yunovich, A. E.; Vasil'eva, E. D.; Bauman, D. A.; Uelin, V. V.; Yavich, B.

doi:10.1134/s1063782610080245

Cited by 8 publications

(6 citation statements)

References 6 publications

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“…It is associated with multiple reflections from the boundaries of two sides of the GaN waveguide. According to the theory of the Fabry–Perot resonator, the interference period in the scale of wavelengths (Δλ) is determined by formulas for the location of the peaks (eqs –): 2 italicnL = m λ 2 L ( n + Δ n ) = ( m + 1 ) ( λ − Δ λ ) where L is the cavity length, n (λ) is the wavelength-related refractive index, m is the order of interference, and Δ n is the variation in the refractive index of Δλ. normalΔ λ = λ / ( 1 + 2 L false( n / λ + dn / normald λ false) ) …”

Section: Results and Discussionmentioning

confidence: 99%

Si-Based GaN Light-Emitting Diodes with MoS₂ Nanosheet-Decorated Fabry–Perot Waveguide Structure

Qin,

Cao,

et al. 2023

ACS Appl. Nano Mater.

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III−V semiconductor light-emitting diodes (LEDs) on Si substrates, suitable for large-scale and large-wafer-size manufacturing, are a convenient option for on-chip light sources. Here, we present the design and fabrication of a MoS 2 nanosheetdecorated InGaN/AlGaN/GaN LED on a Si substrate with a Fabry−Perot waveguide, utilizing standard microfabrication processes. We assess the voltage−current characteristics, electroluminescence (EL) properties, polarization properties, chrominance, and surface temperature of the device. The MoS 2 layer's spectrum filtering effect and the waveguide's interference effect influence the EL properties of GaN LED. The MoS 2 -decorated LED device presented different properties than the bare LED in terms of a higher turn-on voltage, uniform emission pattern, lower surface temperature, and higher polarizability. Besides, the underlying mechanism for spectral modulation is studied. The MoS 2decorated device demonstrates an EL peak near 417 nm, with a high side mode suppression ratio and full width at half-maximum (FWHM) < 1 nm. Our study offers insights into the potential realization of light sources with narrowed spectra using GaN LEDs based on Si materials.

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Section: Results and Discussionmentioning

confidence: 99%

Si-Based GaN Light-Emitting Diodes with MoS₂ Nanosheet-Decorated Fabry–Perot Waveguide Structure

Qin,

Cao,

et al. 2023

ACS Appl. Nano Mater.

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“…Numerous studies [12,13] show that built-in piezoelectric fields have a significant influence on the mobility of two-dimensional carriers. In this regard, this work is biased towards estimating the distribution of the total value of the electric field along the active layer, since this factor determines the frequency characteristic of radiative and non-radiative recombination for interband transitions.…”

Section: Resultsmentioning

confidence: 99%

“…The additional equation below used to evaluate b parameter can also help in determination of the plausibility of parameters estimated in formula (13) where is a normalizing value.…”

Section: Theoretical Modelmentioning

confidence: 99%

Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells

2021

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The article is devoted to the study of the mechanism of piezoelectric scattering of charge carriers in an InGaN/AlGaN/ GaN heterostructures with one filled quantum-confinement subband. The aim of the article is to create a mathematical model that can be used to estimate the kinetic parameters of a two-dimensional electron gas (2DEG) in the structure under study. The results of the calculation of the matrix scattering potentials demonstrated the reliability and consistency on the used model of industrial LED heterostructures with InGaN/GaN quantum wells. It is shown that mechanical stresses in the InGaN/GaN layers lead to an uneven distribution of the total electric field along the active layer. It has been established that the lifetime limiting the mobility of a two-dimensional electron gas in piezoelectric scattering is of the order of 10–9 s.

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“…where U dc is the bias voltage applied to the structure, e is the electron charge, " 0 is the electric constant, N ¼ 10 23 m À3 and is the free electron concentration, " ¼ 7:4 and is the dielectric constant, and E int ¼ À280 kV/cm and is the internal field of the GaN layer. 8) The new refractive index n of the layers due to the linear electro-optical effect was calculated using Eq. ( 5) and the expression 3)…”

Section: Resultsmentioning

confidence: 99%

“…A bias voltage À0:5 < U dc < 0:5 V and square wave modulation voltage U mod (frequency of 370 Hz, amplitude of 0.75 V) were applied on the pnjunction, so it was closed for all applied voltages. 8) All experiments were carried out at room temperature.…”

Section: Methodsmentioning

confidence: 99%

Linear Electro-Optic Effect in Electroreflectance Spectra of AlGaN/InGaN/GaN Light Emitting Diodes Structures

Avakyants¹,

Aslanyan²,

Bokov³

et al. 2013

Jpn. J. Appl. Phys.

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The linear electro-optic effect in InGaN/AlGaN/GaN pn-heterostructures for light emitting diodes, grown by metal–organic chemical vapor deposition on sapphire substrates and flip-chip mounted, was studied by electroreflectance spectroscopy. Interference fringes, whose parameters depend on the DC voltage applied on the pn-junction, were observed in electroreflectance spectra. Data analysis, based on a calculation of the built-in electric field in the depletion layer and linear electro-optic effect, yielded the linear electro-optic coefficient r 13 of 22±6 pm/V for hexagonal In0.12Ga0.88N.

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Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures

Cited by 8 publications

References 6 publications

Si-Based GaN Light-Emitting Diodes with MoS₂ Nanosheet-Decorated Fabry–Perot Waveguide Structure

Si-Based GaN Light-Emitting Diodes with MoS₂ Nanosheet-Decorated Fabry–Perot Waveguide Structure

Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells

Linear Electro-Optic Effect in Electroreflectance Spectra of AlGaN/InGaN/GaN Light Emitting Diodes Structures

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Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures

Cited by 8 publications

References 6 publications

Si-Based GaN Light-Emitting Diodes with MoS2 Nanosheet-Decorated Fabry–Perot Waveguide Structure

Si-Based GaN Light-Emitting Diodes with MoS2 Nanosheet-Decorated Fabry–Perot Waveguide Structure

Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells

Linear Electro-Optic Effect in Electroreflectance Spectra of AlGaN/InGaN/GaN Light Emitting Diodes Structures

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Product

Resources

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Si-Based GaN Light-Emitting Diodes with MoS₂ Nanosheet-Decorated Fabry–Perot Waveguide Structure

Si-Based GaN Light-Emitting Diodes with MoS₂ Nanosheet-Decorated Fabry–Perot Waveguide Structure