Interference effects in differential reflectance spectra of the GaAs epilayers grown on Si substrate

Abstract

We report the observation of oscillating features in differential reflectance spectra from the GaAs epilayer grown on Si substrate in the energy range both below and above the fundamental band gap. It is demonstrated that the oscillating features are due to the difference in the interference between two neighboring areas of the sample. The interference arises from two light beams reflected from different interfaces of the sample. The calculated spectra in the nonabsorption region are in good agreement with measured data. It is shown that the interference effect can be used as a sensitive method to characterize the inhomogeneity of the semiconductor heterostructures.

Ni2+doping effect on potassium barium titanate nanoparticles: enhancement optical and dielectric properties

“…The method is appealing because of its nondestructive nature, simplicity, and relatively crisp features detected at room temperature. It has recently been widely used in semiconductor quantum wells and bulk materials to explore critical point transitions, damage patterns, and subsurface inhomogeneities [27].…”