Interfacial void structure of Au/Sn/Al metalizations on GAAlAs light-emitting diodes

Nakahara, S.; McCoy, R. J.

doi:10.1016/0040-6090(80)90531-3

Cited by 19 publications

(5 citation statements)

References 9 publications

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“…Previous studies of the diffusion of Au in Sn , and Sn in Au have revealed that Au diffusion is very rapid in Sn and Sn diffusion is much slower in Au. It has also been found that AuSn is the first compound to form in interdiffusion of Au and Sn .…”

mentioning

confidence: 95%

Microstructure and Interdiffusion of Template-Synthesized Au/Sn/Au Junction Nanowires

et al. 2004

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Microstructure and interdiffusion of striped Au/ Sn/Au nanowires grown by sequential electrodeposition of Au and Sn in porous polycarbonate membranes were investigated by X-ray diffraction, HRTEM, STEM, EDS, and electrical transport measurements. The Au/Sn junctions were found to contain two intermetallic phases: AuSn, and AuSn 4 . Mechanisms for the formation of these intermetallic phases and the effect of these phases on the superconductivity of striped nanowires were discussed.

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mentioning

confidence: 95%

Microstructure and Interdiffusion of Template-Synthesized Au/Sn/Au Junction Nanowires

et al. 2004

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“…For different reaction temperatures, such as Fig. 10c that shows 6 Sn 5 , on the Sn-Cu/Au interface in both reaction couples. (Fig.…”

Section: Interfacial Reaction Of Sn-cu/au Couplesmentioning

confidence: 97%

“…Simultaneously, Cu is concentrated into the Sn-Cu solder on the interface, which results in the formation of the Cu 6 Sn 5 phase. The Au also diffuses into the Cu 6 Sn 5 phase as (Cu,Au) 6 Sn 5 , which acts as a diffusion barrier against Sn. However, in the early stage of heat treatment, Au content in the (Cu,Au) 6 Sn 5 phase is not so high (estimated to be less than 20 at.%).…”

Section: Interfacial Reaction Of Sn-cu/au Couplesmentioning

confidence: 99%

“…[2][3][4][5][6][7][8][9][10][11][12] Nakahara et al studied the reaction of a Sn/Au system at room temperature and found that there were f-solid solution, AuSn, AuSn 2 , and AuSn 4 phases between Sn and Au. 6,7 Hannech et al researched the reaction of Pb-72at.%Sn with Au at 80-160°C, and three intermetallic compound (IMC) layers, AuSn, AuSn 2 , and AuSn 4 phases, were found. 10 Chen and Yen investigated solid/solid interfacial reactions of Sn-Ag/Au systems at various temperatures.…”

Section: Introductionmentioning

confidence: 97%

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Investigation of the Phase Equilibria of Sn-Cu-Au Ternary and Ag-Sn-Cu-Au Quaternary Systems and Interfacial Reactions in Sn-Cu/Au Couples

Yen

Jao

Hsiao

et al. 2007

Journal of Elec Materi

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The phase equilibria of the Sn-Cu-Au ternary, Ag-Sn-Cu-Au quaternary systems and interfacial reactions between Sn-Cu alloys and Au were experimentally investigated at specific temperatures in this study. The experimental results indicated that there existed three ternary intermetallic compounds (IMCs) and a complete solid solubility between AuSn and Cu 6 Sn 5 phases in the Sn-Cu-Au ternary system at 200°C. No quaternary IMC was found in the isoplethal section of the Ag-Sn-Cu-Au quaternary system. Three IMCs, AuSn, AuSn 2 , and AuSn 4 , were found in all couples. The same three IMCs and (Au,Cu)Sn/ (Cu,Au) 6 Sn 5 phases were found in all Sn-Cu/Au couples. The thickness of these reaction layers increased with increasing temperature and time. The mechanism of IMC growth can be described by using the parabolic law. In addition, when the reaction time was extended and the Cu content of the alloy was increased, the AuSn 4 phase disappeared gradually. The (Au, Cu)Sn and (Cu , Au) 6 Sn 5 layers played roles as diffusion barriers against Sn in Sn-Cu/Au reaction couple systems.

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“…This is due to the higher partial diffusion coefficient of Au, which is about three times higher than the corresponding partial diffusion coefficient of Sn. The Kirkendall pore formation was investigated by Nakahara 25…”

Section: Fluxless Soldering Using Au‐sn Metallurgymentioning

confidence: 99%

Fluxless Flip‐chip Bonding on Flexible Substrates: A Comparison between Adhesive Bonding and Soldering*

Aschenbrenner

Zakel²,

Azdasht³

et al. 1996

Soldering &Amp; Surface Mount Technology

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During the last few years an increasing number of flip‐chip (FC) interconnection technologies have emerged. While flip‐chip assembly offers many advantages compared with conventional packaging techniques, several aspects prevent this technology from entering the high volume market. Among these are the availability of bumped chips and the costs of the substrates, i.e., ceramic substrates with closely matching coefficient of thermal expansion (CTE) to the chip, in order to maintain high reliability. Only recently, with the possibility of filling the gap between chip and organic substrate with an encapsulant, was the reliability of flip‐chips mounted on organic substrates significantly enhanced. This paper presents two approaches to a fluxless process, one based on soldering techniques using Au‐Sn metallurgy and the other on adhesive joining techniques. Soldering is performed with a thermode and with a laser based system. For both of these FC‐joining processes, alternative bump mettallurgies based on electroplated gold, electroplated gold‐tin, mechanical gold and electroless nickel gold bumps are applied.

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Interfacial void structure of Au/Sn/Al metalizations on GAAlAs light-emitting diodes

Cited by 19 publications

References 9 publications

Microstructure and Interdiffusion of Template-Synthesized Au/Sn/Au Junction Nanowires

Microstructure and Interdiffusion of Template-Synthesized Au/Sn/Au Junction Nanowires

Investigation of the Phase Equilibria of Sn-Cu-Au Ternary and Ag-Sn-Cu-Au Quaternary Systems and Interfacial Reactions in Sn-Cu/Au Couples

Fluxless Flip‐chip Bonding on Flexible Substrates: A Comparison between Adhesive Bonding and Soldering*

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