We element specifically studied the electronic and magnetic states of epitaxially grown full-Heusler alloy Co 2 MnSi ͑CMS͒ 1.1 nm ͑4 ML͒ thick ultrathin films facing an epitaxial MgO͑001͒ tunnel barrier by means of x-ray absorption spectroscopy ͑XAS͒ and x-ray magnetic circular dichroism ͑XMCD͒. In situ reflection high-energy electron-diffraction observations indicated that the CMS films grew into the L2 1 structure. The observed XAS and XMCD spectra revealed that the CMS ultrathin film was not oxidized. The ratio of Mn and Co spin magnetic moments obtained by applying the sum rules was about 2.7, close to a theoretical value of 2.8 for CMS with the L2 1 structure. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2824856͔Co-based full-Heusler alloys ͑Co 2 YZ͒ have attracted much interest as a desirable ferromagnetic electrode material for spintronic devices. [1][2][3][4][5] This is because of their potentially high spin polarization arising from the half-metallic ferromagnetic nature theoretically predicted for some of these alloys, and because of their high Curie temperatures, which are well above room temperature ͑RT͒. Some of the present authors recently developed fully epitaxial magnetic tunnel junctions ͑MTJs͒ with a Co 2 YZ thin film of Co 2 Cr 0.6 Fe 0.4 Al ͑CCFA͒, Co 2 MnSi ͑CMS͒, or Co 2 MnGe as a lower electrode and a MgO͑001͒ tunnel barrier, 3-5 and demonstrated relatively high tunnel magnetoresistance ͑TMR͒ ratios of 109% at RT ͑317% at 4.2 K͒ for CCFA/ MgO / Co 50 Fe 50 MTJs ͑Ref. 4͒ and 90% at RT ͑192% at 4.2 K͒ for CMS/ MgO / Co 50 Fe 50 MTJs. 3 The electronic and magnetic states of the interfacial region of ferromagnetic electrodes with a tunnel barrier play an essential role in the spindependent tunneling characteristics in MTJs. It has recently been shown that x-ray absorption spectroscopy ͑XAS͒ and x-ray magnetic circular dichroism ͑XMCD͒ measurements are powerful techniques for obtaining microscopic information about the element-specific electronic and magnetic states in the interfacial region of MTJs. [6][7][8][9] Our purpose of the present study is to clarify the electronic and magnetic states of the interfacial region of Co 2 YZ thin films facing a MgO barrier. For this study, we fabricated epitaxial CMS ultrathin films as typical Co 2 YZ films with an epitaxial MgO barrier and performed XAS and XMCD measurements at the Mn-L 2,3 and Co-L 2,3 edges. To investigate the interfacial region selectively, we fabricated CMS ultrathin films with a 4 ML thickness ͑=1.1 nm͒. The fabricated sample layer structure ͑from the substrate side͒ was as follows: MgO buffer ͑10 nm͒ / Fe underlayer ͑50 nm͒ / CMS ultrathin film ͑1.1 nm= 4 ML͒/MgO barrier ͑2 nm͒ / Ru cap ͑2 nm͒ ͑hereafter called Fe/CMS ͑4 ML͒/MgO͒, grown on a MgO͑001͒ single-crystal substrate. The monolayer of Co 2 MnSi consists of a Co plane and a Mn-Si plane, and a unit cell of CMS, whose lattice parameter is 0.5654 nm ͑Ref. 10͒, corresponds to 2 ML of CMS. To stabilize the ferromagnetism of ultrathin CMS films at RT, we grew them on the ...