Interfacial stress evolution simulation on the graphite substrate/interlayer/diamond film during the cooling process

Guo, Jenhwa; Liu, Jinlong; Hua, Chenyi; Yan, Xiongbo; Wei, Junjun; Chen, Liangxian; Hei, L.F.; Li, Chengming

doi:10.1016/j.diamond.2016.12.017

Cited by 13 publications

(3 citation statements)

References 28 publications

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“…The XRD patterns of Bi 2 Se 3 , Bi 2 OSe 2 , and Bi 2 O 2 Se correspond to the initial phase oxidation for 0, 2, and 3 h in a low oxygen atmosphere, respectively. Here, the experimental overall peaks position is slightly shifted to the right by approximately 1.2 • because of the higher sample temperature [21] and uneven thickness of the substrate. Furthermore, thin films have random in-plane and out-of-plane preferred orientation, only (0 0 l) family of diffraction peaks of Bi 2 Se 3 and Bi 2 O 2 Se can be observed experimentally, which is consistent with previous studies [22,23].…”

Section: Resultsmentioning

confidence: 88%

Phase evolution for oxidizing bismuth selenide

Yu¹,

Liu²,

Huang³

et al. 2022

J. Phys.: Condens. Matter

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The novel Bi2O2Se, produced by the oxidation of the layered Bi2Se3, has been considered as one of the most promising candidates for the next-generation electronics owing to high carrier mobility and air-stability. In this work, by using crystal structure prediction and first-principles calculations, we report the phase transformations from the hexagonal Bi2Se3 to a monoclinic Bi2OSe2, and then to the tetragonal Bi2O2Se with the gradual oxidization. Owing to the difference in electronegativity between selenium (Se) and oxygen (O), the oxidation process is accompanied by an increase in bond ionicity. Our results can shed light on the phenomena occurring in the interaction between the precursors Bi2Se3 and O2 and have a potential contribution to the application of optoelectronic devices. The intermediate Bi2OSe2 with calculated band gap of 1.01 eV, may be a candidate for photovoltaic application in future.

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Section: Resultsmentioning

confidence: 88%

Phase evolution for oxidizing bismuth selenide

Yu¹,

Liu²,

Huang³

et al. 2022

J. Phys.: Condens. Matter

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“…This leads to a non-stationary flux of carbon to the plasma and gradual improvement of the diamond quality. The use of graphite as the solid carbon source can be used to deposit continuous diamond films on separate non-carbon substrates [11][12][13][14][15][16], while such films on graphite could be grown using interlayer resistant to hydrogen plasma etching, as demonstrated for Ti interlayer on graphite in case of DC arc jet diamond deposition [34][35].…”

Section: Discussionmentioning

confidence: 99%

Diamond Deposition on Graphite in Hydrogen Microwave Plasma

Zhu

Yao

Dai

et al. 2018

J. Coat. Sci. Technol.

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Hydrogen plasma etching of graphite generates radicals that can be used for diamond synthesis by chemical vapor deposition (CVD). We studied the etching of polycrystalline graphite by a hydrogen microwave plasma, growth of diamond particles of the non-seeded graphite substrates, and characterized the diamond morphology, grain size distribution, growth rate, and phase purity. The graphite substrates served simultaneously as a carbon source, this being the specific feature of the process. A disorder of the graphite surface structure reduces as the result of the etching as revealed with Raman spectroscopy. The diamond growth rate of 3-5 µm/h was achieved, the quality of the produced diamond grains improving with growth time due to inherently nonstationary graphite etching process.

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“…Metallization of the diamond surface has some basic and important roles. The first is to improve diamond retention strength through reducing the interface energy between diamond grits and the metal matrix, increasing the diamond surface roughness, and the relaxation of residual stress with a coated interlayer [28][29][30]. The second role is to protect the diamond surface, preventing oxidization and graphitization of the diamond under high temperatures, because the coatings avoid the immediate contact between the diamond and oxygen, and catalytic elements such as iron, nickel and cobalt [31][32][33].…”

Section: Surface Treatment Of Diamondmentioning

confidence: 99%

A Review of the Diamond Retention Capacity of Metal Bond Matrices

Xiao-jun

Duan

2018

Metals

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This article presents a review of the current research into the diamond retention capacity of metal matrices, which largely determines the service life and working performance of diamond tools. The constitution of diamond retention capacity, including physical adsorption force, mechanical inlaying force, and chemical bonding force, are described. Improved techniques are summarized as three major types: (1) surface treatment of the diamond: metallization and roughening of the diamond surface; (2) modification of metal matrix: the addition of strong carbide forming elements, rare earth elements and some non-metallic elements, and pre-alloying or refining of matrix powders; (3) change in preparation technology: the adjustment of the sintering process and the application of new technologies. Additionally, the methods used in the evaluation of diamond retention strength are introduced, including three categories: (1) instrument detection methods: scanning electron microscopy, X-ray diffractometry, energy dispersive spectrometry and Raman spectroscopy; (2) mechanical test methods: bending strength analytical method, tension ring test method, and other test methods for chemical bonding strength; (3) mechanical calculation methods: theoretical calculation and numerical computation. Finally, future research directions are discussed.

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Interfacial stress evolution simulation on the graphite substrate/interlayer/diamond film during the cooling process

Cited by 13 publications

References 28 publications

Phase evolution for oxidizing bismuth selenide

Phase evolution for oxidizing bismuth selenide

Diamond Deposition on Graphite in Hydrogen Microwave Plasma

A Review of the Diamond Retention Capacity of Metal Bond Matrices

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