2020
DOI: 10.1002/anie.202010252
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Interfacial Strain Release from the WS2/CsPbBr3 van der Waals Heterostructure for 1.7 V Voltage All‐Inorganic Perovskite Solar Cells

Abstract: Perovskite lattice distortion induced by residual tensile strain from the thermal expansion mismatch between the electron-transporting layer (ETL) and perovskite film causes a sluggish charge extraction and transfer dynamics in all-inorganic CsPbBr 3 perovskite solar cells (PSCs) because of their higher crystallization temperatures and thermal expansion coefficients. Herein, the interfacial strain is released by fabricating a WS 2 /CsPbBr 3 van der Waals heterostructure owing to their matched crystal lattice s… Show more

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Cited by 173 publications
(163 citation statements)
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References 44 publications
(58 reference statements)
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“…In comparison, when TS-CuPc-i is applied (Figure 3b,c), the (100) peak is negligibly shifted in the same depth range, indicative of less-distorted perovskite lattice and hence evidently reduced tensile strain near the HTL/PVK interface. [34] To better understand such a difference, thermal expansion coefficient (α TE ) was estimated for CsPbI 2 Br perovskite and dopant-free Spiro-OMeTAD, respectively, using the previously reported method. [28,35] By plotting d-spacing with ambient temperature (Figure 3d and Figure S10, Supporting Information), the α TE of CsPbI 2 Br is revealed to be almost one order larger than that of Spiro-OMeTAD.…”
Section: Resultsmentioning
confidence: 99%
“…In comparison, when TS-CuPc-i is applied (Figure 3b,c), the (100) peak is negligibly shifted in the same depth range, indicative of less-distorted perovskite lattice and hence evidently reduced tensile strain near the HTL/PVK interface. [34] To better understand such a difference, thermal expansion coefficient (α TE ) was estimated for CsPbI 2 Br perovskite and dopant-free Spiro-OMeTAD, respectively, using the previously reported method. [28,35] By plotting d-spacing with ambient temperature (Figure 3d and Figure S10, Supporting Information), the α TE of CsPbI 2 Br is revealed to be almost one order larger than that of Spiro-OMeTAD.…”
Section: Resultsmentioning
confidence: 99%
“…Better-aligned energy levels, suppressed grain boundary recombination losses, and cascade charge transfer yielded a device with PCE of ∼20.3% with excellent air, photo, and thermal stabilities (Tyagi et al, 2020). All-inorganic PSCs are highly stable and improving their efficiency can be a key to achieve commercial PSCs (Duan et al, 2019;Zhou et al, 2020;Du et al, 2021).…”
Section: Composition Engineeringmentioning
confidence: 99%
“…Thee lectronic band structure and the corresponding materials properties of inorganic perovskite layers such as the absorption coefficient and band gap can be significantly altered by element substitution at the Pb and/or Is ites.F or CsPbBr 3 ,the VB near the Fermi level is mainly determined by the Br 4p and Pb 6s orbitals,while the main contributions to the CB come from the Pb 6p and Br 4p states.Thus,tuning the composition of inorganic perovskites can greatly impact their energy level match with adjacent interlayers.When the halide composition is changed, the band gaps of CsPbX 3 can be tuned from 1.73 eV for CsPbI 3 to 2.30 eV for CsPbBr 3 ,where a V OC of 1.70 Vcan be achieved. [63] As for the lead site,aseries of CsPb 1Àx Sn x IBr 2 perovskite films present tunable band gaps from 2.04 eV to 1.64 eV. [64] TheV Bs hifts upwards from À5.79 eV for CsPbI 2 Br to À5.57 eV for CsPb 0.55 Sn 0.45 I 2 Br, which relaxes the requirements for al ow-lying VB of the HTL.…”
Section: Energy Level Of the Inorganic Perovskite Layermentioning
confidence: 99%