2002
DOI: 10.1149/1.1516907
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Interfacial Reaction in Poly Si[sub 1−x]Ge[sub x]/ZrO[sub 2] with Ge Content in Poly Si[sub 1−x]Ge[sub x] Films

Abstract: The interfacial reaction between poly Si 1Ϫx Ge x (x ϭ 0, 0.2, 0.4) and ZrO 2 films after annealing was investigated to use ZrO 2 films as an alternative gate dielectric. In the poly Si/ZrO 2 structure, silicidation was the dominant reaction due to continuous formation of Zr-silicide and SiO during annealing. However, in poly Si 1Ϫx Ge x (x ϭ 0.2, 0.4)/ZrO 2 , silicate formation was the main reaction after annealing at 900°C for 30 min. In addition, after annealing at 800°C, the silicate layer was observed onl… Show more

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