“…Multiple benefits of antiferromagnetic (AFM) based MHNCs are evident, including having nonvolatile memories, increased data processing speeds, size miniaturization, and decreased power consumption, thus making them particularly suitable for spintronic devices. ,,, The use of an AFM component, such as CoO, Cr 2 O 3 , MnO, and NiO, in MHNCs is particularly advantageous because it enables the exchange bias effect spin–spin coupling when assembled with a ferro/ferrimagnetic (FM/FiM) component. The exchange bias effect is vital for enabling the manipulation of the magnetic properties of heterostructured magnetic systems. , The interface exchange coupling that drives the exchange bias of AFM/FM or AFM/FiM heterostructured nanocrystal systems can be manipulated to control the magnetic coercivity, spin-state switching times, and to overcome the superparamagnetic limit. , In systems where the AFM magnetic anisotropy energy dominates, the FiM layer spins are pinned toward the direction of the AFM layer raising the magnetic anisotropy of the system through interface exchange coupling. ,,, Because the magnetic anisotropy of nanomaterials is highly dependent on the crystalline structure, size, shape, interface quality and composition, having the capability of tailoring such features can be important for achieving robust magnetic anisotropic energies in nanoparticulate heterostructures. − …”