2017
DOI: 10.1038/s41535-017-0020-0
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Interfacial orbital preferential occupation induced controllable uniaxial magnetic anisotropy observed in Ni/NiO(110) heterostructures

Abstract: Unexpected physical phenomena could emerge at heterostructure interfaces, and interface effects are also capable of giving rise to magnetic anisotropy. In this work, a peculiar uniaxial magnetic anisotropy in (polycrystalline Ni)/(epitaxial NiO)/SrTiO 3 (110) heterostructures is investigated. Thickness dependence of the anisotropy confirms its interfacial effect nature. The NiO antiferromagnetic ordering induced interface exchange coupling should not be responsible for the anisotropy according to the temperatu… Show more

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Cited by 12 publications
(5 citation statements)
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“…10,11 In systems where the AFM magnetic anisotropy energy dominates, the FiM layer spins are pinned toward the direction of the AFM layer raising the magnetic anisotropy of the system through interface exchange coupling. 3,4,12,13 Because the magnetic anisotropy of nanomaterials is highly dependent on the crystalline structure, size, shape, interface quality and composition, having the capability of tailoring such features can be important for achieving robust magnetic anisotropic energies in nanoparticulate heterostructures. 14−18 Initial work in our laboratory has demonstrated that significant coercivity and exchange bias fields are obtainable for NiO-based and Mn incorporated MHNCs.…”
Section: ■ Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…10,11 In systems where the AFM magnetic anisotropy energy dominates, the FiM layer spins are pinned toward the direction of the AFM layer raising the magnetic anisotropy of the system through interface exchange coupling. 3,4,12,13 Because the magnetic anisotropy of nanomaterials is highly dependent on the crystalline structure, size, shape, interface quality and composition, having the capability of tailoring such features can be important for achieving robust magnetic anisotropic energies in nanoparticulate heterostructures. 14−18 Initial work in our laboratory has demonstrated that significant coercivity and exchange bias fields are obtainable for NiO-based and Mn incorporated MHNCs.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Multiple benefits of antiferromagnetic (AFM) based MHNCs are evident, including having nonvolatile memories, increased data processing speeds, size miniaturization, and decreased power consumption, thus making them particularly suitable for spintronic devices. ,,, The use of an AFM component, such as CoO, Cr 2 O 3 , MnO, and NiO, in MHNCs is particularly advantageous because it enables the exchange bias effect spin–spin coupling when assembled with a ferro/ferrimagnetic (FM/FiM) component. The exchange bias effect is vital for enabling the manipulation of the magnetic properties of heterostructured magnetic systems. , The interface exchange coupling that drives the exchange bias of AFM/FM or AFM/FiM heterostructured nanocrystal systems can be manipulated to control the magnetic coercivity, spin-state switching times, and to overcome the superparamagnetic limit. , In systems where the AFM magnetic anisotropy energy dominates, the FiM layer spins are pinned toward the direction of the AFM layer raising the magnetic anisotropy of the system through interface exchange coupling. ,,, Because the magnetic anisotropy of nanomaterials is highly dependent on the crystalline structure, size, shape, interface quality and composition, having the capability of tailoring such features can be important for achieving robust magnetic anisotropic energies in nanoparticulate heterostructures. …”
Section: Introductionmentioning
confidence: 99%
“…Most recently, it has been confirmed both experimentally and theoretically that AFM domain in an antiferromagnet with biaxial anisotropy such as NiO film deposited on SrTiO 3 substrate could be reversed by applied electric current [29,30], which is very meaningful for the development of AFM spintronics. Taking NiO as an example to estimate the real physical values, we set the exchange stiffness A≈5×10 −13 J m −1 , a≈4.2 Å, μ s ≈1.7μ B .…”
Section: Simulation Results and Discussionmentioning
confidence: 89%
“…In order to help one to catch up the results easily, we estimate the real value of the domain wall velocity taking NiO as an example [43]. Specifically, for K/K c = 1 × 10 −4 a −1 and α = 0.002, the speed of the wall for NiO with the exchange stiffness A ≈ 5 × 10 −13 J/m, a ≈ 4.2 Å, μ s ≈ 1.7μ B (μ B is the Bohr magneton) is estimated to be ∼100 m/s.…”
Section: Brief Discussionmentioning
confidence: 99%