Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy

Benyahia, D.; Kubiszyn, Łukasz; Michalczewski, Krystian; Kębłowski, A.; Martyniuk, Piotr; Piotrowski, J.; Rogalski, Antoni

doi:10.1007/s11664-017-5766-4

Cited by 20 publications

(12 citation statements)

References 28 publications

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“…As such, despite the wealth of literature, it was only possible to make a comparison for HRXRD data. Similar HRXRD measurements were carried out and reported in Reference [11]. The dislocation density of about 10 8 cm −2 determined for a 2-µm-thick IMF-GaSb layer is close to the result obtained for our sample #011.…”

Section: Discussion Of Experimental Resultssupporting

confidence: 91%

“…The absolute value of TDD is not as essential as the credibility of the method used for its determination. There are three commonly used approaches, namely counting the dislocation lines on the plan-view and/or cross-sectional images obtained by the transmission electron microscopy (TEM) [9,10], calculation of the dislocation density based on the rocking curves measured at the appropriate reflections using the high-resolution x-ray diffraction method (HRXRD) [11], and counting of the etched pits on the material surface observed using scanning electron microscopy (SEM) [12]. The approaches based on TEM observations and HRXRD measurements have some limitations.…”

Section: Introductionmentioning

confidence: 99%

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On the Study of Dislocation Density in MBE GaSb-Based Structures

Jasik¹,

Smoczyński²,

Sankowska³

et al. 2020

Crystals

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The results of the study on threading dislocation density (TDD) in homo- and heteroepitaxial GaSb-based structures (metamorphic layers, material grown by applying interfacial misfit array (IMF) and complex structures) deposited using molecular beam epitaxy are presented. Three measurement techniques were considered: high-resolution x-ray diffraction (HRXRD), etch pit density (EPD), and counting tapers on images obtained using atomic force microscopy (AFM). Additionally, high-resolution transmission electron microscopy (HRTEM) was used for selected samples. The density of dislocations determined using these methods varied, e.g., for IMF-GaSb/GaAs sample, were 6.5 × 108 cm−2, 2.2 × 106 cm−2, and 4.1 × 107 cm−2 obtained using the HRXRD, EPD, and AFM techniques, respectively. Thus, the value of TDD should be provided together with information about the measurement method. Nevertheless, the absolute value of TDD is not as essential as the credibility of the technique used for optimizing material growth. By testing material groups with known parameters, we established which techniques can be used for examining the dislocation density in GaSb-based structures.

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Section: Discussion Of Experimental Resultssupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

On the Study of Dislocation Density in MBE GaSb-Based Structures

Jasik¹,

Smoczyński²,

Sankowska³

et al. 2020

Crystals

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“…Recently, a novel growth technique called interfacial misfit array (IMF) growth mode was developed that allows buffer-free growth of high quality GaSb layers onto lattice-mismatched GaAs substrates [13,14]. Growth of InAsSb nBn photodetector layers was also demonstrated on GaAs substrates using a high quality GaSb buffer layer prepared by the IMF technique [15].…”

Section: Introductionmentioning

confidence: 99%

Monolithically Integrated InAsSb-Based nBnBn Heterostructure on GaAs for Infrared Detection

Xie

Pusino

Khalid

et al. 2018

IEEE J. Select. Topics Quantum Electron.

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High operating temperature infrared photodetectors with multi-color function that are capable of monolithic integration are of increasing importance in developing the next generation of mid-IR image sensors. Applications of these sensors include defense, medical diagnosis, environmental and astronomical observations. We have investigated a novel InAsSb-based nBnBn heterostructure that combines a state-of-art InAsSb nBn detector with an InAsSb/GaSb heterojunction detector. At room temperature, reduction in the dark current density of more than an order of magnitude was achieved compared to previously investigated InAsSb/GaSb heterojunction detectors.Electrical characterization from cryogenic temperatures to room temperature confirmed that the nBnBn device was diffusion limited for temperatures above 150K. Optical measurements demonstrated that the nBnBn detector was sensitive in both the SWIR and MWIR wavelength range at room temperature. The specific detectivity (D*) of the competed nBnBn devices was calculated to be 8.6×10 8 cm·Hz 1/2 W -1 at 300K and approximately 1.0×10 10 cm·Hz 1/2 W -1 when cooled down to 200K (with 0.3V reverse bias and 1550nm illumination). In addition, all photodetector layers were grown monolithically on GaAs active layers using the interfacial misfit array growth mode. Our results therefore pave the way for the development of new active pixel designs for monolithically integrated mid-IR imaging arrays.

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“…Following the deoxidization of GaAs substrates at 610 °C (measured by BT), a 250-nm-thick GaAs layer was deposited at 585 °C (BT) to get a smooth starting surface. Subsequently, a 1-μm-thick GaSb buffer layer has been grown using IMF technique at a BT temperature of 440 °C [ 16 , 19 ]. This technique consists on the formation of a periodic array of 90° misfit dislocation at the GaAs/GaSb interface leading to a low dislocation density (≈ 10 6 cm −2 ) [ 20 ].…”

Section: Methodsmentioning

confidence: 99%

“…Therefore, it is compulsory to concept new growth techniques to relieve the strain and reduce the dislocation density. Among these techniques are low-temperature nucleation [ 14 ] and IMF technique [ 15 , 16 ].…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy

et al. 2018

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In the present work, we report on the in-plane electrical transport properties of midwave (MWIR) and longwave infrared (LWIR) InAs/GaSb type-II superlattices (T2SLs) grown by molecular beam epitaxy (MBE) system on GaAs (001) substrate. The huge lattice mismatch between the T2SL and GaAs substrate is reduced by the growth of GaSb buffer layer based on interfacial misfit array (IMF) technique. In order to compensate the strain in the InAs/GaSb T2SL, we utilized a special shutters sequence to get InSb-like and GaAs-like interfaces. It is found that the MWIR InAs/GaSb T2SL exhibits a p- and n-type conduction at low and high temperatures, respectively. Interestingly, the conduction change temperature is observed to be dependent on the growth temperature. On the other hand, LWIR T2SL conduction is dominated only by electrons. It is important to note that the dominant scattering mechanism in LWIR T2SL at low temperatures is the interface roughness scattering mechanism.

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Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy

Cited by 20 publications

References 28 publications

On the Study of Dislocation Density in MBE GaSb-Based Structures

On the Study of Dislocation Density in MBE GaSb-Based Structures

Monolithically Integrated InAsSb-Based nBnBn Heterostructure on GaAs for Infrared Detection

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy

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