Abstract:A photochemical process for controlling block copolymer (BCP) domain orientation in an area selected manner is described. Polymers with photoswitching surface energy, used as interfacial underlayers adjoining the BCP layer, were synthesized with photoacid labile monomers. The interfacial polymers were designed to be either inherently neutral or preferential to poly(styrene-block-4-trimethylsilylstyrene). Through patternwise exposure to 193nm light and subsequent reaction with photogenerated acid, the wetting c… Show more
“…The key to driving the self-assembly process is the annealing step of the thin film, during which the block copolymers undergo nanoscale phase segregation. , Thin films of the block copolymer of interest are typically spin-coated onto a substrate in order to produce smooth films of controlled thicknesses. The substrate surface should be cleaned beforehand in an appropriate manner, with perhaps additional functionalization with a brush layer, or other chemical means. − As-spun films are kinetically trapped in a disordered state due to fast evaporation of solvent and represent the starting point for self-assembly. By far, the two most widely used techniques for annealing of a block copolymer thin film are thermal and solvent vapor annealing, although other recently described and less-developed approaches deserve mention, including light- or laser-promoted photothermal annealing − and the use of shear forces, − electric fields, − solvent immersion, , and magnetic fields − to induce long-range alignment.…”
Section: Background: Annealing Of
Thin Films Of Block Copolymersmentioning
The
self-assembly of block copolymers to generate nanopatterns
is of great interest as an inexpensive approach to sub-20 nm lithography.
Compared to thermal annealing, solvent vapor annealing has several
intriguing advantages with respect to the annealing of thin films
of block copolymers, particularly for polymers with high interaction
parameters, χ, and high molecular weights. In this methods paper,
we describe a controlled solvent vapor flow annealing system with
integrated in situ microscopy and laser reflectometry, as well as
a feedback loop that automatically controls the solvent vapor flow
rate, based upon real-time calculations of the difference between
thickness set point and the observed film thickness. The feedback
loop enables precise control of swelling and deswelling of the polymer
thin film, the degree of swelling at the dwell period, and preprogrammed
complex multistep annealing profiles. The in situ microscope provides
critical insight into the morphological evolution of the block copolymer
thin films over a broad area of the sample, revealing information
about terraced phases, on the scale of tens and hundreds of micrometers,
during the annealing process. This device could be a powerful tool
for understanding and optimizing solvent annealing by providing multiple
sources of in situ information, at both the micro- and nanoscales.
“…The key to driving the self-assembly process is the annealing step of the thin film, during which the block copolymers undergo nanoscale phase segregation. , Thin films of the block copolymer of interest are typically spin-coated onto a substrate in order to produce smooth films of controlled thicknesses. The substrate surface should be cleaned beforehand in an appropriate manner, with perhaps additional functionalization with a brush layer, or other chemical means. − As-spun films are kinetically trapped in a disordered state due to fast evaporation of solvent and represent the starting point for self-assembly. By far, the two most widely used techniques for annealing of a block copolymer thin film are thermal and solvent vapor annealing, although other recently described and less-developed approaches deserve mention, including light- or laser-promoted photothermal annealing − and the use of shear forces, − electric fields, − solvent immersion, , and magnetic fields − to induce long-range alignment.…”
Section: Background: Annealing Of
Thin Films Of Block Copolymersmentioning
The
self-assembly of block copolymers to generate nanopatterns
is of great interest as an inexpensive approach to sub-20 nm lithography.
Compared to thermal annealing, solvent vapor annealing has several
intriguing advantages with respect to the annealing of thin films
of block copolymers, particularly for polymers with high interaction
parameters, χ, and high molecular weights. In this methods paper,
we describe a controlled solvent vapor flow annealing system with
integrated in situ microscopy and laser reflectometry, as well as
a feedback loop that automatically controls the solvent vapor flow
rate, based upon real-time calculations of the difference between
thickness set point and the observed film thickness. The feedback
loop enables precise control of swelling and deswelling of the polymer
thin film, the degree of swelling at the dwell period, and preprogrammed
complex multistep annealing profiles. The in situ microscope provides
critical insight into the morphological evolution of the block copolymer
thin films over a broad area of the sample, revealing information
about terraced phases, on the scale of tens and hundreds of micrometers,
during the annealing process. This device could be a powerful tool
for understanding and optimizing solvent annealing by providing multiple
sources of in situ information, at both the micro- and nanoscales.
“…Studies of block copolymer (BCP) materials and their phase separation in bulk and thin-film form have exploded over the past few decades due to their multitude of applications in lithography − and drug delivery and as biomaterials, rheological modifiers, and mesoporous materials . This is partly because BCPs provide a flexible size and shape tunable platform to create nanostructures over large areas in the 3–200 nm length scale range, using inexpensive materials and processes.…”
We
report the successful synthesis of previously inaccessible poly(3-hydroxystyrene)-block-poly(dimethylsiloxane) (P3HS-b-PDMS)
block copolymers (BCPs) with varying volume fractions, molecular weights,
and narrow dispersities by sequential living anionic polymerization.
The chemical structure and molecular weight were fully characterized
by 1H NMR and gel permeation chromatography. The BCP phase
behavior was investigated using small-angle X-ray scattering (SAXS)
and transmission electron microscopy. Temperature-resolved SAXS measurements
from symmetric disordered sample were used to determine the interaction
parameter (χ) using mean-field theory. The results provide an
estimate for interaction parameter, χHS/DMS(T) = 33.491/T + 0.3126, with an upper bound
value of 0.39 at 150 °C. The calculated χ for P3HS-b-PDMS is approximately 4 times higher than that observed
in a commonly studied high-χ system, PS-b-PDMS.
The ultrahigh interaction parameter observed here affords the formation
of well-ordered materials at remarkably low molecular weight. The
presence of both PDMS and P3HS provides significant versatility in
terms of etch selectivity, while the hydroxystyrene domain offers
additional functionality as it can be exploited for immobilizing functional
organic moieties.
“…Furthermore, pattern transfer blocking can be achieved in a single photolithographic exposure without involving additional processes. This similar concept of using directly patternable orientation layers was previously demonstrated with patterns created by photolithography, ,, electron beam, , and X-ray exposures, but successful DSA of silicon-containing BCPs using photopatternable surface treatments has not yet been demonstrated.…”
Section: Introductionmentioning
confidence: 82%
“…Previously, we reported photopatternable grafting surface treatments (pGSTs). These surfaces were used to control the orientation of poly(styrene- block -4-trimethylsilylstyrene) (PS- b -PTMSS), − which has high etch selectivity and can be pattern-transferred . The pGSTs contained an acid-labile functional group and were designed to be either inherently neutral or preferential to one of the BCP domains.…”
Polarity-switching photopatternable guidelines can be directly used to both orient and direct the self-assembly of block copolymers. We report the orientation and alignment of poly(styrene-block-4-trimethylsilylstyrene) (PS-b-PTMSS) with a domain periodicity, L 0 , of 44 nm on thin photopatternable grafting surface treatments (pGSTs) and cross-linkable surface treatments (pXSTs), containing acid-labile 4-tert-butoxystyrene monomer units. The surface treatment was exposed using electron beam lithography to create well-defined linear arrays of neutral and preferential regions. Directed self-assembly (DSA) of PS-b-PTMSS with much lower defectivity was observed on pXST than on pGST guidelines. The study of the effect of film thickness on photoacid diffusion by Fourier transform infrared spectroscopy and near-edge X-ray absorption fine structure spectroscopy suggested slower diffusion in thinner films, potentially enabling production of guidelines with sharper interfaces between the unexposed and exposed lines, and thus, the DSA of PS-b-PTMSS on thinner pXST guidelines resulted in better alignment control.
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