Interfacial layers and impurity segregation in InP/In0.53Ga0.47As superlattices

Hanamoto, L. K.; Henriques, A. B.; Tribuzy, C.V.-B.; Souza, P. L.; Yavich, B.; Abramof, E.

doi:10.1590/s0103-97332002000200023

Cited by 2 publications

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“…In the analysis of the QB structures we take sϭ0 and Z ϭ0, which we obtained from an investigation of InGaAs/InP superlattices grown under the same conditions as used in this work. 13 In addition, ␦ϭ18 Å ͑see above͒, and L B is taken as equal to the design value, given in Table I for all samples. The remaining variable in Eq.…”

Section: Resultsmentioning

confidence: 99%

Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grown by low pressure metalorganic vapor phase epitaxy

Hanamoto

Farias

Henriques

et al. 2003

Journal of Applied Physics

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Quantum barrier structures of lattice matched InGaAs/InP composition, and doped with Si in the middle of the InP layers, were studied by Shubnikov–de Haas measurements. For a given doping level, the density of free carriers shows a rapid decrease when the thickness of the InP barrier is reduced. This is correlated with the amount of Si atoms that reaches the InGaAs/InP interface by thermal diffusion. To interpret these results, a simple model is proposed, in which it is assumed that some of the Si atoms that are located near the interface form nondonor centers, due to local stress and compositional disorder. The model is used to describe quantitatively the loss in the free carrier concentration as a function of the distance between the doped layer and the interfacial one. Calculations of the subband populations and scattering rates at the Fermi level provide support for the interpretation of the experimental data.

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Section: Resultsmentioning

confidence: 99%

Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grown by low pressure metalorganic vapor phase epitaxy

Hanamoto

Farias

Henriques

et al. 2003

Journal of Applied Physics

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“…Capacitance-voltage measurements indicated that the donor atoms are distributed in a layer whose characteristic width is equal to 18 Å. 21 The quantum mobility Q i of carriers in each miniband and from the Tamm state were obtained from the damping of the SdH amplitudes at 4.2 K, using the procedure described in Ref. 9.…”

Section: B Experimental Resultsmentioning

confidence: 99%

Electronic scattering in doped finite superlattices

2001

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The electronic scattering and momentum relaxation times for the individual levels in finite short-period modulation-doped superlattices were calculated, using the random phase approximation ͑RPA͒ to describe the screened electron-defect interactions. To obtain the highest possible electronic mobility, the donor impurities were placed in the middle of the barriers separating the wells. If the impurities are displaced from their ideal positions, the electronic mobility decreases. To evaluate the theory, measurements of the scattering and momentum relaxation times were done on InP/In 0.53 Ga 0.47 As superlattices. Whereas theory and experiment agree fairly well on the values of the scattering times, the agreement on the momentum relaxation times is only in order of magnitude. This is attributed to the inexactness of the screened potential in the RPA at short distances from the scattering centers.

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Interfacial layers and impurity segregation in InP/In0.53Ga0.47As superlattices

Cited by 2 publications

References 0 publications

Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grown by low pressure metalorganic vapor phase epitaxy

Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grown by low pressure metalorganic vapor phase epitaxy

Electronic scattering in doped finite superlattices

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