Interfacial layer growth condition dependent carrier transport mechanisms in HfO2/SiO2 gate stacks

Sahoo, Santosh Kumar; Misra, D.

doi:10.1063/1.4726186

Cited by 21 publications

(6 citation statements)

References 19 publications

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“…Therefore, in high field region, the Poole-Frenkel (P-F) mechanism is the dominant conduction process (22). Additionally, it was reported that, Poole-Frenkel mechanism is low with chemically grown oxide because of higher trap level energy and activation energy (44). For DSDS and As-Dep Hf 1-x Zr x O 2 the leakage current enters the Poole-Frenkel tunneling regime after approximately 1.8 V (Fig.…”

Section: Constant Voltage Stress (Flat-band Voltage Shift)mentioning

confidence: 96%

Reliability of ALD Hf_1-XZr_xO₂ Deposited by Intermediate Annealing or Intermediate Plasma Treatment

et al. 2013

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The reliability of atomic layer deposited Hf1-xZrxO2 with x=0.8 on a SiON interfacial layer (IL) has been analyzed in detail for three different oxide deposition processes, (i) DADA: samples were subjected to dielectric deposition and thermal annealing in a cyclical process; (ii) DSDS: samples were subjected to similar cyclical process with dielectric deposition and exposure to Ar plasma; and (iii) As-Dep: the dielectric for the control samples was deposited without any intermediate step. Capacitance-voltage and current-voltage characteristics of the MOS capacitors (MOSCAP) with metal gate (TiN), subjected to a constant field stress of 2.75 × 107 V/cm in the gate injection mode, show that the flat-band voltage shift (∆VFB ) and stress induced leakage current (SILC) below 100 s stress is the lowest for DSDS samples whereas the worst degradation was observed for DADA samples. However, identical degradation was observed in all sample types when stress was increased to 1000 s. Intermediate plasma exposure (DSDS process) seems to supress the oxide trap formation as it provides EOT downscaling ability and good reliability performance. The reliability characteristics, when compared with pure HfO2, seem to improve with the addition of ZrO2.

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Section: Constant Voltage Stress (Flat-band Voltage Shift)mentioning

confidence: 96%

Reliability of ALD Hf_1-XZr_xO₂ Deposited by Intermediate Annealing or Intermediate Plasma Treatment

et al. 2013

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“…The decrease in gate leakage attributes not solely to increase in T inv but also to reduction in interface trap density (D it ). 25,26) Saturation threshold voltage (V t,sat ) after O 3 cleaning is 17 mV higher than that after SC-1 cleaning as shown in Fig. 2, which is mainly due to increase in T inv .…”

mentioning

confidence: 87%

Dependency of electrical performances and reliability of 28 nm logic transistor on gate oxide interface treatment methods

Ko¹,

Lee²,

Ansari³

et al. 2020

Appl. Phys. Express

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The effects of precleaning processes by O3 and SC-1 in depositing high-κ gate dielectric are closely investigated in experimental comparison study. The study is made in the p-type MOSFET on the 28 nm technology node in product. O3 cleaning demonstrated significant effects of increasing the effective oxide thickness in the inversion operation mode, reducing the gate leakage, and suppressing the standby leakage current. The electrical performances of PMOSFETs fabricated employing these two different precleaning methods were analyzed, and furthermore, device reliability was evaluated. The negative bias temperature instability lifetime showed 4-fold difference depending on cleaning method.

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“…For the HRS, the charge transport can be due to the Poole-Frenkel (P-F) mechanism, which accounts for the reduction of potential wells at high electric field F H on the thin oxide layer [44], which is defined as [45]:…”

Section: Conduction Mechanisms At Different Resistive Statesmentioning

confidence: 99%

Semiempirical Two-Dimensional Model of the Bipolar Resistive Switching Process in Si-NCs/SiO2 Multilayers

Ramirez-Rios,

González-Flores,

Avilés-Bravo

et al. 2023

Nanomaterials

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In this work, the SET and RESET processes of bipolar resistive switching memories with silicon nanocrystals (Si-NCs) embedded in an oxide matrix is simulated by a stochastic model. This model is based on the estimation of two-dimensional oxygen vacancy configurations and their relationship with the resistive state. The simulation data are compared with the experimental current-voltage data of Si-NCs/SiO2 multilayer-based memristor devices. Devices with 1 and 3 Si-NCs/SiO2 bilayers were analyzed. The Si-NCs are assumed as agglomerates of fixed oxygen vacancies, which promote the formation of conductive filaments (CFs) through the multilayer according to the simulations. In fact, an intermediate resistive state was observed in the forming process (experimental and simulated) of the 3-BL device, which is explained by the preferential generation of oxygen vacancies in the sites that form the complete CFs, through Si-NCs.

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Interfacial layer growth condition dependent carrier transport mechanisms in HfO2/SiO2 gate stacks

Cited by 21 publications

References 19 publications

Reliability of ALD Hf_1-XZr_xO₂ Deposited by Intermediate Annealing or Intermediate Plasma Treatment

Reliability of ALD Hf_1-XZr_xO₂ Deposited by Intermediate Annealing or Intermediate Plasma Treatment

Dependency of electrical performances and reliability of 28 nm logic transistor on gate oxide interface treatment methods

Semiempirical Two-Dimensional Model of the Bipolar Resistive Switching Process in Si-NCs/SiO2 Multilayers

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Interfacial layer growth condition dependent carrier transport mechanisms in HfO2/SiO2 gate stacks

Cited by 21 publications

References 19 publications

Reliability of ALD Hf1-XZrxO2 Deposited by Intermediate Annealing or Intermediate Plasma Treatment

Reliability of ALD Hf1-XZrxO2 Deposited by Intermediate Annealing or Intermediate Plasma Treatment

Dependency of electrical performances and reliability of 28 nm logic transistor on gate oxide interface treatment methods

Semiempirical Two-Dimensional Model of the Bipolar Resistive Switching Process in Si-NCs/SiO2 Multilayers

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Product

Resources

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Reliability of ALD Hf_1-XZr_xO₂ Deposited by Intermediate Annealing or Intermediate Plasma Treatment

Reliability of ALD Hf_1-XZr_xO₂ Deposited by Intermediate Annealing or Intermediate Plasma Treatment