Interfacial investigation and mechanical properties of glass-Al-glass anodic bonding process

Hu, Lifang; Xue, Yongzhi; Shi, Fang

doi:10.1088/1361-6439/aa83c7

Cited by 12 publications

(4 citation statements)

References 29 publications

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“…Although the SOG process has lower cost and better structural applicability than SOI, there are few studies on the sacrificial layer material. Aluminum is used at Peking University [13] , but there is no detailed report on the effect of etching. Moreover, aluminum will generate cracks in anodic bonding [14,15] , and in theory, cracks cannot prevent F ions from etching the anchor region.…”

Section: Introductionmentioning

confidence: 99%

A new DRIE cut-off material in SOG MEMS process

Si¹,

Fu²,

Han³

et al. 2023

J. Semicond.

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The silicon on glasses process is a common preparation method of micro-electro-mechanical system inertial devices, which can realize the processing of thick silicon structures. This paper proposes that indium tin oxides (ITO) film can serve as a deep silicon etching cut-off layer because ITO is less damaged under the attack of fluoride ions. ITO has good electrical conductivity and can absorb fluoride ions for silicon etching and reduce the reflection of fluoride ions, thus reducing the foot effect. The removal and release of ITO use an acidic solution, which does not damage the silicon structure. Therefore, the selection of the sacrificial layer has an excellent effect in maintaining the shape of the MEMS structure. This method is used in the preparation of MEMS accelerometers with a structure thickness of 100 μm and a feature size of 4 μm. The over-etching of the bottom of the silicon structure caused by the foot effect is negligible. The difference between the simulated value and the designed value of the device characteristic frequency is less than 5%. This indicates that ITO is an excellent deep silicon etch stopper material.

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Section: Introductionmentioning

confidence: 99%

A new DRIE cut-off material in SOG MEMS process

Si¹,

Fu²,

Han³

et al. 2023

J. Semicond.

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show abstract

“…At higher temperatures, the sodium oxide splits into sodium and oxygen ions where the intermediate layer acts as a diffusion barrier. The sodium ions migrate towards the cathode, whereas the oxygen ions migrate towards the anode, creating an interface at the intermediate layer [2][3][4][5][6]. However, the use of an intermediate layer may be unfavorable for the optical transparency of devices and certain anodic bonding equipment may not be readily available.…”

Section: Introductionmentioning

confidence: 99%

Glass-to-Glass Fusion Bonding Quality and Strength Evaluation with Time, Applied Force, and Heat

et al. 2022

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A bonding process was developed for glass-to-glass fusion bonding using Borofloat 33 wafers, resulting in high bonding yield and high flexural strength. The Borofloat 33 wafers went through a two-step process with a pre-bond and high-temperature bond in a furnace. The pre-bond process included surface activation bonding using O2 plasma and N2 microwave (MW) radical activation, where the glass wafers were brought into contact in a vacuum environment in an EVG 501 Wafer Bonder. The optimal hold time in the EVG 501 Wafer bonder was investigated and concluded to be a 3 h hold time. The bonding parameters in the furnace were investigated for hold time, applied force, and high bonding temperature. It was concluded that the optimal parameters for glass-to-glass Borofloat 33 wafer bonding were at 550 °C with a hold time of 1 h with 550 N of applied force.

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“…The glass to glass bonding can be done via sputtering a thin film [32]. For glass-Si-glass or glass-metalglass triple-stack, the two interfaces can be bonded together by using three electrodes in which one anodic electrode connects to silicon and other two cathode electrodes connect to glass, and the two interfaces can be bonded together at the same time [33]. However, this method cannot be used to bond Si-glass-Si stacks.…”

Section: Introductionmentioning

confidence: 99%

Study on the mechanism of Si–glass–Si two step anodic bonding process

Wang

Xue

et al. 2018

J. Micromech. Microeng.

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Si–glass–Si was successfully bonded together through a two-step anodic bonding process. The bonding current in each step of the two-step bonding process was investigated, and found to be quite different. The first bonding current decreased quickly to a relatively small value, but for the second bonding step, there were two current peaks; the current first decreased, then increased, and then decreased again. The second current peak occurred earlier with higher temperature and voltage. The two-step anodic bonding process was investigated in terms of bonding current. SEM and EDS tests were conducted to investigate the interfacial structure of the Si–glass–Si samples. The two bonding interfaces were almost the same, but after an etching process, transitional layers could be found in the bonding interface and a deeper trench with a thickness of ~1.5 µm could be found in the second bonding interface. Atomic force microscopy mapping results indicated that sodium precipitated from the back of the glass, which makes the roughness of the surface become coarse. Tensile tests indicated that the fracture occurred at the glass substrate and that the bonding strength increased with the increment of bonding temperature and voltage with the maximum strength of 6.4 MPa.

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Interfacial investigation and mechanical properties of glass-Al-glass anodic bonding process

Cited by 12 publications

References 29 publications

A new DRIE cut-off material in SOG MEMS process

A new DRIE cut-off material in SOG MEMS process

Glass-to-Glass Fusion Bonding Quality and Strength Evaluation with Time, Applied Force, and Heat

Study on the mechanism of Si–glass–Si two step anodic bonding process

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