Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe₄N/CoN Bilayers

Abstract

Anisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ'-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ'-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ'-Fe4N layer and interfacial spin scattering.

Bending strain tailored exchange bias in epitaxial NiMn/ γ ′-Fe4N bilayers

“…38 At a smaller t, the reversal of the pinned interfacial magnetic moments can mainly contribute to the magnetization reversal of the c 0 -Fe 4 N layer, and so H EB and H C are larger, which is consistent with other systems. 36,39,40 In Fig. 2(a 0 ), at t ¼ 8 nm, H EB increases with the ROC from 1 to 5 mm and decreases with the ROC from 5 to 2 mm at tensile strains, where H EB decreases with the ROC from þ1 to À5 mm and increases with the ROC from À5 to À2 mm at compressive strains.…”

Scaling of anomalous Hall effects in facing-target reactively sputtered Fe4N films

“…Recently, the current-induced magnetization switching was reported in the magnetic tunnel junctions (MTJ) with the g 0 -Fe 4 N free layer. 16 To date, no studies have reported the anomalous Hall effect (AHE) of g 0 -Fe 4 N films. 2,3,11,12 Negative anisotropic magnetoresistance (AMR) has been observed in the epitaxial g 0 -Fe 4 N films due to the spin-down conduction electrons.…”

“…[13][14][15] Moreover, a rectangular-like AMR was reported in epitaxial g 0 -Fe 4 N/CoN bilayers. 16 To date, no studies have reported the anomalous Hall effect (AHE) of g 0 -Fe 4 N films.…”

Magnetically correlated anisotropic resistive switching manipulated by electric field in Co/PMN-PT heterostructures

“…The electric-field-controlled reversible magnetization rotation, which is important for practical applications in a wide range of low-power magnetic and spintronic devices [1,12], has been reported in Ni/0.7Pb(Mg 1/3 Nb 2/3 )O 3 -0.3PbTiO 3 [8,10,23] (Ni/PMN-PT) and CoFeB/PMN-PT [24] as well as the phase field simulations [8,12]. These magnetization rotations should naturally affect the electronic transport behaviors in the magnetic films [25][26][27][28]. Because the magnetization orientation in 3d-alloy films gives rise to the in-plane anisotropic resistivity owing to the spin-orbit interaction [29], the magnetization rotations can induce the variations of anisotropic magnetoresistivity (AMR) in magnetic films such as Fe 4 N [25,27], NiFe [26,28],…”

“…These magnetization rotations should naturally affect the electronic transport behaviors in the magnetic films [25][26][27][28]. Because the magnetization orientation in 3d-alloy films gives rise to the in-plane anisotropic resistivity owing to the spin-orbit interaction [29], the magnetization rotations can induce the variations of anisotropic magnetoresistivity (AMR) in magnetic films such as Fe 4 N [25,27], NiFe [26,28],…”