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Interfacial electromigration of aluminum in thin-film polysilicon/silicide structures
Abstract: Electromigration in thin-film polycides of Ta and W was studied. Extrusions formed after several weeks of powering at current densitites of 106 A/cm2 at a temperature of 400 °C. The extrusions were determined to be of aluminum, which had diffused from the wire bonds.
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