Interfacial Doping for Efficient Charge Injection in Organic Semiconductors

Lee, Jae-Hyun; Kim, Jang‐Joo

doi:10.1002/9783527654949.ch4

Cited by 5 publications

(5 citation statements)

References 118 publications

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“…Clustering of dopant molecules was observed for transition metal oxides, 30,55,58 and it was argued that the doping efficiency is given by a product of the dispersion efficiency and the efficiency of forming the dopant/ matrix pair to form a charge transfer complex. 62,63 Furthermore, the doping efficiency can be limited by intrinsic charge carrier traps as discussed above, 46,52 or, as discussed above as well, the large dopant activation energy 63 caused by either strong Coulomb interaction 35,36 or a strong hybridization of dopant and matrix molecule. 40 Another explanation adding to the limited doping efficiency was proposed recently.…”

Section: Doping Efficiencymentioning

confidence: 99%

Doped Organic Transistors

et al. 2016

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Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

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Section: Doping Efficiencymentioning

confidence: 99%

Doped Organic Transistors

et al. 2016

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“…Despite their hazardous reactivity and diffusivity, highly reactive metals are still widely employed today to facilitate efficient n-doping and ensure desirable device performance towards commercial application 10 – 12 . Although air-stable alkali salt precursors (e.g., Cs 2 CO 3 13 and Rb 2 CO 3 14 ) that can liberate alkali metals during the fabrication process have been exploited to address this issue, the resulting n-doping process always suffers from undesired outgassing and metal diffusion. Air-stable, vacuum-deposited, byproduct-free and widely applicable n-doping strategies remain vigorously ongoing pursuit until now 15 , 16 .…”

Section: Introductionmentioning

confidence: 99%

In situ-formed tetrahedrally coordinated double-helical metal complexes for improved coordination-activated n-doping

Liu

et al. 2022

Nat Commun

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In situ coordination-activated n-doping by air-stable metals in electron-transport organic ligands has proven to be a viable method to achieve Ohmic electron injection for organic optoelectronics. However, the mutual exclusion of ligands with high nucleophilic quality and strong electron affinity limits the injection efficiency. Here, we propose meta-linkage diphenanthroline-type ligands, which not only possess high electron affinity and good electron transport ability but also favour the formation of tetrahedrally coordinated double-helical metal complexes to decrease the ionization energy of air-stable metals. An electron injection layer (EIL) compatible with various cathodes and electron transport materials is developed with silver as an n-dopant, and the injection efficiency outperforms conventional EILs such as lithium compounds. A deep-blue organic light-emitting diode with an optimized EIL achieves a high current efficiency calibrated by the y colour coordinate (0.045) of 237 cd A−1 and a superb LT95 of 104.1 h at 5000 cd m−2.

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“…It is only when it meets the substrate that it can transfer electronic charge and become a cation. This is a particular case of doping different from the classical molecular doping, [64][65][66] where acceptor or donor molecules are inserted into the organic semiconductor host. A significant difference with molecular doping is the absence of negatively charged recombination centers in the film itself.…”

Section: Electron Energy Level Scheme Of the Ito/dipo-ph 4 Interfacementioning

confidence: 99%

Energy-Level Alignment of a Hole-Transport Organic Layer and ITO: Toward Applications for Organic Electronic Devices

Arnoux

Boucly

Barth

et al. 2017

ACS Appl. Mater. Interfaces

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2,2',6,6'-Tetraphenyl-4,4'-dipyranylidene (DIPO-Ph) was grown by vacuum deposition on an indium tin oxide (ITO) substrate. The films were characterized by atomic force microscopy as well as synchrotron radiation UV and X-ray photoelectron spectroscopy to gain an insight into the material growth and to better understand the electronic properties of the ITO/DIPO-Ph interface. To interpret our spectroscopic data, we consider the formation of cationic DIPO-Ph at the ITO interface owing to a charge transfer from the organic layer to the substrate. Ionization energy DFT calculations of the neutral and cationic species substantiate this hypothesis. Finally, we present the energetic diagram of the ITO/DIPO-Ph system, and we discuss the application of this interface in various technologically relevant systems, as a hole-injector in OLEDs or as a hole-collector interfacial layer adjacent to the prototypical OPV layer P3HT:PCBM.

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Interfacial Doping for Efficient Charge Injection in Organic Semiconductors

Cited by 5 publications

References 118 publications

Doped Organic Transistors

Doped Organic Transistors

In situ-formed tetrahedrally coordinated double-helical metal complexes for improved coordination-activated n-doping

Energy-Level Alignment of a Hole-Transport Organic Layer and ITO: Toward Applications for Organic Electronic Devices

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