2021
DOI: 10.1109/jeds.2020.3039746
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Interfacial Dipole Modulation Device With SiOX Switching Species

Abstract: In recent years, substantial research efforts have been devoted toward the development of non-volatile memory devices (NVM). In this regard, devices utilizing interfacial dipole modulation (IDM) have been considered. However, the narrow memory window of current IDM stack structures (HfO2-TiO2-SiO2) has been a major constraint. Herein, we propose a structure that exploits SiOx interfacial dipole layers, thereby overcoming the memory window limitation of conventional IDM stack structures. A memory window up to 8… Show more

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