Interfacial Diffusion during Growth of SnO<sub>2</sub>(110) on TiO<sub>2</sub>(110) by Oxygen Plasma Assisted Molecular Beam Epitaxy

Palgrave, Robert G.; Bourlange, A.; Payne, David J.; Foord, John S.; Egdell, R.G.

doi:10.1021/cg8009404

Cited by 21 publications

(19 citation statements)

References 30 publications

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“…This conclusion parallels observations that been have made on the MBE growth of SnO 2 on TiO 2 ͑110͒. 36 Here it appears that the sticking probability for Sn under an O flux identical to that used in the current growth runs decreases dramatically for substrate temperatures above 775°C. A marked decrease in SnO 2 growth rate in plasma MBE with increasing substrate temperature was also found by Tsai et al 37 This contrasts with the behavior of In where the growth rate for In 2 O 3 seems largely independent of temperature between 650 and 900°C.…”

Section: A Morphology and Extent Of Sn Incorporationsupporting

confidence: 89%

The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy

Bourlange

Payne

Palgrave

et al. 2009

Journal of Applied Physics

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The influence of Sn doping on the growth of In 2 O 3 on Y-stabilized ZrO 2 ͑100͒ by oxygen plasma assisted molecular beam epitaxy has been investigated over a range of substrate temperatures between 650 and 900°C. The extent of dopant incorporation under a constant Sn flux decreases monotonically with increasing substrate temperature, although the n-type carrier concentration in "overdoped" films grown at 650°C is lower than in films with a lower Sn concentration grown at 750°C. The small increase in lattice parameter associated with Sn doping leads to improved matching with the substrate and suppresses breakup of the films into square islands observed in high temperature growth of undoped In 2 O 3 on Y-stabilized ZrO 2 ͑100͒. Plasmon energies derived from infrared reflection spectra of Sn-doped films are found to be close to satellite energies in core level photoemission spectroscopy, but for a nominally undoped reference sample there is evidence for carrier accumulation at the surface. This influences both the In 3d core line shape and the intensity of a peak close to the Fermi energy associated with photoemission from the conduction band.

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Section: A Morphology and Extent Of Sn Incorporationsupporting

confidence: 89%

The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy

Bourlange

Payne

Palgrave

et al. 2009

Journal of Applied Physics

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“…However, a slight decrease in μ H was observed for the film grown at T s = 700 °C in spite of the good crystallinity. We speculate that at such high T s , interdiffusion of Sn and Ti atoms occurred at the film/substrate interface 27 , which might have caused impurity scattering and thus suppressed μ H . Hereafter we fixed T s at 600 °C.…”

Section: Resultsmentioning

confidence: 97%

“…To verify the proposed model, we investigated film thickness and growth orientation dependence of μ H for TTO films with x = 3 × 10 −3 grown on various substrates [12][13][14][15][16][17][18][19][20][21][23][24][25][26][27]39,41,42 , (001)-, (101)-, and (110)-planes of TiO 2 , and m-, r-, and c-planes of Al 2 O 3 substrates (see Supplementary Fig. S4 online).…”

Section: Resultsmentioning

confidence: 99%

High mobility approaching the intrinsic limit in Ta-doped SnO2 films epitaxially grown on TiO2 (001) substrates

Fukumoto

Nakao

Shigematsu

et al. 2020

Sci Rep

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Achieving high mobility in Sno 2 , which is a typical wide gap oxide semiconductor, has been pursued extensively for device applications such as field effect transistors, gas sensors, and transparent electrodes. In this study, we investigated the transport properties of lightly Ta-doped SnO 2 (Sn 1−x ta x o 2 , TTO) thin films epitaxially grown on TiO 2 (001) substrates by pulsed laser deposition. The carrier density (n e ) of the TTO films was systematically controlled by x. optimized tto (x = 3 × 10 −3 ) films with n e ~ 1 × 10 20 cm −3 exhibited a very high Hall mobility (μ H ) of 130 cm 2 V −1 s −1 at room temperature, which is the highest among Sno 2 films thus far reported. The μ H value coincided well with the intrinsic limit of μ H calculated on the assumption that only phonon and ionized impurities contribute to the carrier scattering. The suppressed grain-boundary scattering might be explained by the reduced density of the {101} crystallographic shear planes.Tin dioxide (SnO 2 ) has been extensively studied as a practical transparent oxide semiconductor in various applications such as field-effect transistors 1,2 , gas sensors 3-5 , and transparent electrodes 6-8 . Hall mobility (μ H ) is a key parameter in determining the performance of such devices, and the μ H values of bulk SnO 2 single crystals are in the range of 70 to 260 cm 2 V −1 s −1 at room temperature 9-11 . However, SnO 2 thin films show a rather low μ H of less than 100 cm 2 V −1 s −1 even in well-optimized epitaxial films 12,13 , which limits the practical use of SnO 2 .The lower μ H in SnO 2 epitaxial thin films is primarily attributable to the lack of lattice-matched substrates. Thus far, corundum Al 2 O 3 and rutile TiO 2 have been widely used as the substrates for the epitaxial growth 14,15 of SnO 2 . Particularly, Al 2 O 3 , with a high thermal and chemical stability, is suitable for the growth of SnO 2 thin films at high temperatures, but the SnO 2 thin films deposited on Al 2 O 3 suffer from lowered crystallinity owing to the difference between the crystal structures of the film and substrate. For example, very low μ H values are frequently observed for epitaxial SnO 2 films on Al 2 O 3 . TiO 2 shares the same rutile structure as SnO 2 , but it has a relatively large lattice-mismatch with SnO 2 , which is 3.1% and 7.7% for the a-axis and c-axis, respectively. Indeed, it was reported that μ H of the undoped SnO 2 film with (001) orientation on TiO 2 (001) was limited to a rather small value 16 , that is, ~40 cm 2 V −1 s −1 . To overcome the above-mentioned difficulty, very thick self-buffer layers 12,13 have been employed to grow high-μ H epitaxial SnO 2 films on Al 2 O 3 .Another important factor for achieving high μ H is to control the carrier density (n e ) because carriers play two competing roles in μ H ; an increase in n e enhances the screening of the Coulomb scattering potential and thus increases μ H , whereas an increased amount of dopants suppresses μ H owing to impurity scattering. To date, much effort has been made to g...

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“…SnO 2 in rutile structure, a wide band gap n‐type semiconductor, has been widely used in semiconductor gas sensors , thin‐film transistors , solar cells , oxidation catalysts for CO , and CH 4 , transparent electrode for flat panel displays , and lithium ion batteries owing to low electrical resistivity, high transmission in the visible region, good electrochemical properties and high chemical stability. The fabrication of SnO 2 thin films, especially high quality epitaxial films, has been studied by various deposition techniques including oxygen plasma‐assisted molecular beam epitaxy , physical vapor deposition , pulsed laser deposition , spray pyrolysis , sputtering , atomic layer deposition (ALD) , and chemical vapor deposition (CVD) . CVD is an advantageous deposition method particularly suited for the synthesis of high purity crystals with excellent crystalline and optical properties .…”

Section: Introductionmentioning

confidence: 99%

Nitrogen incorporation in SnO₂ thin films grown by chemical vapor deposition

Jiang

Kramm

et al. 2016

Physica Status Solidi (b)

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The influence of nitrogen incorporation in high concentrations on the structural properties and morphology of SnO2–xNx thin films grown by chemical vapor deposition is studied. A decrease in crystallite size and a lattice expansion in SnO2–xNx films with increasing x are found by X‐ray diffraction analysis and Raman spectroscopy. Substitutional nitrogen with a binding energy of 397.15 eV was detected by X‐ray photoelectron spectroscopy, attributed to the N3− ion in the SnN bond. The increase of the N atomic concentration x in SnO2–xNx films from 0 to 7.9 at.% without phase separation with increasing NH3 flow rate during the deposition is accompanied by a decrease of O atomic concentration.

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Interfacial Diffusion during Growth of SnO₂(110) on TiO₂(110) by Oxygen Plasma Assisted Molecular Beam Epitaxy

Cited by 21 publications

References 30 publications

The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy

The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy

High mobility approaching the intrinsic limit in Ta-doped SnO2 films epitaxially grown on TiO2 (001) substrates

Nitrogen incorporation in SnO₂ thin films grown by chemical vapor deposition

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Interfacial Diffusion during Growth of SnO2(110) on TiO2(110) by Oxygen Plasma Assisted Molecular Beam Epitaxy

Cited by 21 publications

References 30 publications

The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy

The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy

High mobility approaching the intrinsic limit in Ta-doped SnO2 films epitaxially grown on TiO2 (001) substrates

Nitrogen incorporation in SnO2 thin films grown by chemical vapor deposition

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Interfacial Diffusion during Growth of SnO₂(110) on TiO₂(110) by Oxygen Plasma Assisted Molecular Beam Epitaxy

Nitrogen incorporation in SnO₂ thin films grown by chemical vapor deposition