Interfacial Chemistry‐Modified QD‐Coupled CdTe Solid Nanowire and Its Hybrid with Graphene Quantum Dots for Enhanced Photocurrent Properties

Abstract

Here in, we report the formation of CdTe quantum dot interconnected solid nanowire network by a bottom up process. The as formed nanostructure, also, named as quantum dot solid structure has exhibited a high magnitude photocurrent value of 0.25 mA, corresponding to the biasing voltage of 1.5 V. The improved photocurrent generation is a consequence of suppressed inter-dot charge transport resistance upon quantum solid nanowire network formation. This interesting network structure was further decorated with graphene quantum dots by optimizing the growth parameters. The hybrid nanostructure has shown a further enhancement in the photocurrent generation. Formation of such new nanostructures and their interesting photo-physical properties are discussed in detail.

Highly Responsive Ultraviolet Sensor Based on ZnS Quantum Dot Solid with Enhanced Photocurrent

“…During the hybrid growth process, the GO was reduced as rGO by the hydrazine hydrate, a reducing agent added during the reaction. This reduction of GO further continues and when the reaction time reaches 48 hrs time, the rGO further reduced and etched into graphene quantum dots (GQDs) 43 . We believe that the formation of GQDs contribute the resultant photocurrent and it is because of this reason, the ZnS QD solid/graphene hybrid with 48 hrs prepared device a generated higher photocurrent value of 82 mA.…”

“…The ZnS quantum dots solid were prepared by a modified simple chemical route 43,67,68 . Zn(CH 3 CO 2 ) 2 ·2H 2 O.and Na 2 S (purchased from Sigma Aldrich) were dissolved separately in double-distilled water.…”

“…Like the arrangement of individual atoms can lead to the formation of atomic solids, quantum dot solid can be formed by means of an effective arrangement of quantum dots. In our previous work, we have attained CdTe QDs solid wire-like structure in the prolonged reaction condition, which shows better photocurrent response than quantum dots based device 43 . The bulk bandgap of CdTe lying in the visible region makes it more suitable for solar cell applications than acting as an UV sensing device.…”

Ag2BiI5 Perovskite Quantum Dots Passivated with Oleylamine Sulfide for Solar Cells and Detection of Cu(II) Ions

“…The peaks at 1745 and 1670 cm −1 are attributed to the CO and CC stretching vibrations, respectively. 13,44,45 However, in the oleylamine−sulfide passivated QD samples, IR peaks were diminishing compared to the bare QDs and oleylamine samples. Further, the characteristic peaks at 1246 and 1048 cm −1 are attributed to C−N and C−O stretching vibrations, respectively.…”

“…The inorganic bismuth halide-based structure is well known and important as it could be a useful alternative to the lead-based halide perovskite materials, which have several drawbacks, such as poor stability, poor reproducibility, toxicity issues in human health, and hazards to the environment . Recently, inorganic bismuth halide perovskites have emerged with a variety of applications such as light-emitting diodes, − photodetectors, − and solar cells. , The promising tunable band gap by changing their halide components (Cl, Br, and I) and control over the size of quantum dots (QDs) and morphology in the nanometer scale (quantum confinement effect − ) are their significant advantages. A high photoluminescence (PL) quantum yield, ease of creating more excitons (electron–hole pairs), longer exciton lifetime, and high charge carrier mobility make them useful in solar cells, photodetectors, and photocatalytic applications. − …”