Interfacial Band Engineering of Highly Efficient PEDOT:PSS/p‐Si/ZnO Heterojunction Solar Cells

Abstract

Hybrid heterojunction solar cells (HHSCs) using different active materials as hole selective transport layer (HTL) and electron selective transport layer (ETL) show great potential in both low‐cost and high‐power conversion efficiency (PCE). Here, PEDOT:PSS/p‐Si/ZnO backcontact heterojunction solar cells were prepared using the simple low‐temperature solution method. PEDOT:PSS was introduced into p‐Si‐based solar cells as an anti‐reflective and passivation layer to optimize device performance. The effect of the work function (WF) of ZnO on device performance were investigated, and a PCE of 10.74% was achieved using low WF ZnO. In addition, the PEDOT:PSS layer was doped with Nafion, and the surface passivation quality of the p‐Si was dramatically enhanced. By optimizing the doping concentration of Nafion, the PCE of the optimized device reached 11.43%, which is currently the highest PCE for p‐Si‐based solar cells using solution method. The findings provide a simple and promising method to achieve high‐performance PEDOT:PSS/p‐Si/ZnO HHSCs.This article is protected by copyright. All rights reserved.