INTERFACES TO 6H-SiC SUBSTRATES – TECHNOLOGY AND SIMULATION

Abstract

This paper gives a short overview of inhomogeneities at the semiconductor metal interface. The model for the contact area is described, and the simulation results are presented and discussed. It is concluded that the contacts to the SiC substrate will include some errors. These inhomogeneities cause changes in the current distribution at the interface, which in turn, could lead to the creation of hot spots. With the help of electrothermal simulations, it is possible to determine the location and current peak value of the hot spot and therefore to avoid damaging the device.