Interface trap-induced radiofrequency and low-frequency noise analysis under temperature variation of a heterostacked source L-gate tunnel field effect transistor
Debika Das,
Ujjal Chakraborty,
Pranjal Borah
Abstract:This brief exclusively demonstrates a comprehensive analysis of the adverse impact of interface trap charge (ITC) under the influence of temperature variation on a hetero-stacked (HS) source L-gate tunnel field effect transistor (TFET) having SiGe pocket. An investigation of both static and RF characteristics has been carried out. It appears that ITCs situated at the Silicon (Si)/oxide interface fluctuates the flat-band voltage to alter the various analog/RF parameter characteristics. Uniform ITCs are seen to … Show more
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