Interface structures of Al0.85Sc0.15N-on-Si thin films grown by reactive magnetron sputtering upon post-growth cyclic rapid thermal annealing
Xiaohu Huang,
Anna Marie Yong,
Ming Lin
et al.
Abstract:Al0.85Sc0.15N thin films, about 920 nm thick, have been deposited on the Si (001) substrate by reactive magnetron sputtering at 600 °C. X-ray diffraction and pole-figure measurements revealed [0002]-oriented texture structures of the nitride films without any phase separations before and after cyclic annealing at 600–900 °C for up to 48 min. Cross-sectional studies by transmission electron microscopy and energy dispersive x-ray analysis revealed an intermediate Al0.85Sc0.15N layer of ∼24.6 nm thick with smalle… Show more
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