Interface structure of epitaxial graphene grown on 4H-SiC(0001)

Hass, Joanna; Millán-Otoya, J. E.; First, Phillip N.; Conrad, E. H.

doi:10.1103/physrevb.78.205424

Cited by 110 publications

(101 citation statements)

References 61 publications

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“…Graphene grown in vacuum on the C-face of SiC{0001} has ≈50 nm size domains also with considerable rotational disorder, although this disorder only extends over about 10% of the total possible range of rotational angles (judging from the width of the diffraction streaks that extend over ≈3° of a 30° sector). 26,27 To fully exploit the nonlinear I-V curve found for the doped GIG tunnel junction, it is desirable to fashion it into some sort of three-terminal device. This can be accomplished simply by putting the GIG junction between two additional gate electrodes, in a geometry identical to that used in the BiSFET 5 (or, with chemical doping of the GIG electrodes as described above, then just a single gate electrode above or below the GIG junction would likely suffice).…”

Section: Discussionmentioning

confidence: 99%

Single-particle tunneling in doped graphene-insulator-graphene junctions

Feenstra

Jena

Gu³

2012

Journal of Applied Physics

156

260

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The characteristics of tunnel junctions formed between n-and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the twodimensional electronic states of the graphene (2D-2D tunneling) is evaluated. At a voltage bias such that the Dirac points of the two electrodes are aligned, a large resonant current peak is produced. The magnitude and width of this peak are computed, and its use for devices is discussed. The influences of both rotational alignment of the graphene electrodes and structural perfection of the graphene are also discussed.

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Section: Discussionmentioning

confidence: 99%

Single-particle tunneling in doped graphene-insulator-graphene junctions

Feenstra

Jena

Gu³

2012

Journal of Applied Physics

156

260

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“…On the C-face, larger domains (*200 nm) of multilayered, rotationally disordered graphene are produced [167,168]. On the Si-face, UHV annealing leads to small domains, *30-100 nm [168,169]. (Si (0001)-and C (000-1)-terminated) annealed at high T ([1000°C) under ultra-high vacuum (UHV) graphitize due to the evaporation of Si [170,171].…”

Section: Epitaxial Growth Of Graphenementioning

confidence: 99%

Synthesis of graphene

et al. 2016

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Graphene, a two-dimensional material of sp 2 hybridization carbon atoms, has fascinated much attention in recent years owing to its extraordinary electronic, optical, magnetic, thermal, and mechanical properties as well as large specific surface area. For the tremendous application of graphene in nano-electronics, it is essential to fabricate high-quality graphene in large production. There are different methods of generating graphene. This review summarizes the exfoliation of graphene by mechanical, chemical and thermal reduction and chemical vapor deposition and mentions their advantages and disadvantages. This article also indicates recent advances in controllable synthesis of graphene, illuminates the problems, and prospects the future development in this field.

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“…22,31,[45][46][47][48][49] The growth proceeds from step edges, with the decomposing layers first forming a (6√3x 6√3)R30° carbon rich surface reconstruction known as the "buffer layer" or "layer 0." 32,45,46,48,50 The exact atomic structure of layer 0 is not known experimentally, but the carbon density is very close to that of a graphene monolayer.…”

Section: Growth and Structurementioning

confidence: 99%

Epitaxial Graphenes on Silicon Carbide

First¹,

Heer²,

Seyller³

et al. 2010

MRS Bull.

186

151

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The materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals is reviewed. We show that the growth of epitaxial graphene on Si-terminated SiC is much different than growth on the Cterminated SiC surface, and discuss the physical structure of these graphenes. The unique electronic structure and transport properties of each type of epitaxial graphene is described, as well as progress toward the development of epitaxial graphene devices. This materials system is rich in subtleties, and graphene grown on the two polar faces differs in important ways, but all of the salient features of ideal graphene are found in these epitaxial graphenes, and wafer-scale fabrication of multi-GHz devices already has been achieved.

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Interface structure of epitaxial graphene grown on 4H-SiC(0001)

Cited by 110 publications

References 61 publications

Single-particle tunneling in doped graphene-insulator-graphene junctions

Single-particle tunneling in doped graphene-insulator-graphene junctions

Synthesis of graphene

Epitaxial Graphenes on Silicon Carbide

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