Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers

Zhang, Pei; Zhang, Xiaowei; Lü, Peng; Xu, Xin; Chen, Kunji

doi:10.1016/j.apsusc.2013.11.128

Cited by 18 publications

(9 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Photoluminescence at room temperature was observed at 870 nm; the large Stokes shi between the linear absorption edge and emission band implied that the emission might originate from the recombination of photoexcited carriers via interface states with an energy level inside the gap. 56 In Table 2, the nonlinear absorption coefficient and nonlinear refractive index of the sample upon changing the excitation pulse time from ps to fs are shown. When the sample was excited by a picosecond laser, it showed saturation absorption with b ¼ À3.1 Â 10 À6 cm W À1 and n 2 ¼ À1.3 Â 10 À10 cm 2 W À1 .…”

Section: Nonlinear Optical Studies Of Silicon-based Materialsmentioning

confidence: 99%

See 1 more Smart Citation

Nonlinear optical properties of metal nanoparticles: a review

2017

View full text Add to dashboard Cite

Metal nanoparticles (MNPs) hold great technological promise because of the possibility of engineering their electronic and optical properties through material design. One of the effective methods to fabricate MNPs is ion implantation. In this review, recent results on the nonlinear optical properties of nanoparticles (including copper, silver, gold, and bismuth nanoparticles) doped in various bases have been discussed. Some specific optical nonlinear properties, such as nonlinear refraction, two-photon absorption, and optical limiting, for femtosecond, picosecond, and nanosecond laser pulses have also been covered. In addition to ion implantation, we have summarized several other methods for the preparation of composite materials, and Z-scan has been used to study the nonlinear optical properties of these materials.

show abstract

Section: Nonlinear Optical Studies Of Silicon-based Materialsmentioning

confidence: 99%

“…The nonlinear optical response of nc-Si/SiO 2 by changing the excitation pulse duration from ps to fs56 …”

mentioning

confidence: 99%

Nonlinear optical properties of metal nanoparticles: a review

2017

View full text Add to dashboard Cite

show abstract

“…Table 4. Summary data on the forbidden bandwidth and peaks position at different oxidation levels of silicon Bond energy, eV [13] Forbidden bandwidth, eV where ρ-density of the film (g/cm 3 ), x-factor that determines the ratio of silicon and oxygen in the film (relative units).…”

Section: Resultsmentioning

confidence: 99%

“…where Z-atomic number, A-atomic weight (g/mol), ρ-density (g/cm 3 ), E a -average electron energy on the way (keV) and J aaverage ionization potential (keV).…”

Section: Scanning Electron Microscopy With Energy Selection Of Detectmentioning

confidence: 99%

“…According to a number of authors, PL centered at 870 nm was observed, and the large Stokes shift between the linear absorption edge and emission band implied that the emission might originate from the recombination of photo-excited carriers via interface states with energy level inside the gap. [3] Thus, the results of the above studies allow using these layers as reasoned constructional solutions when developing structures for micro-and nanoelectronics by harnessing modern technological equipment's potential.…”

Section: Introductionmentioning

confidence: 97%

See 1 more Smart Citation

Complex investigation of multilayer nanostructure of a-Si/SiO_1.9 by probe and spectroscopic analysis techniques. Visualization of the band structure. Studying of the band structure of the suboxide border layers

Pereyaslavtsev

Соколов

Vatopedsky

2015

Surf. Interface Anal.

View full text Add to dashboard Cite

Complex investigation of multilayer nanostructure of a-Si/SiO 1.9 by probe and spectroscopic analysis techniques. Visualization of the band structure. Studying of the band structure of the suboxide border layers A. Pereyaslavtsev,* I. Sokolov and A. Vatopedsky This article describes an integrated approach to the study of multilayer nanostructures of a-Si/SiO 1.9 as a potential model to study the influence of the effects arising at the interface of Si/SiO 2 under the influence of ionizing radiation. The results of the functional layers of amorphous silicon and silicon dioxide surface topology investigation have been disclosed. The possibility of application of a band gap contrast in electron probe studies by means of electron energy filtering during the detection process has been demonstrated. Changes in valence band and band gap through depth of the a-Si/SiO 1.9 nanostructure have been registered. As part of the study, density of states of the a-Si/SiO 1.9 multilayer nanostructures and depth distribution of surface suboxide layers of native oxide of amorphous silicon have been reconstructed using the determination of an effective mean free path of the electrons by the TPP2M algorithm in conjunction with PARXPS and REELS measurements.

show abstract

Nanocrystalline Silicon-Based Multilayers and Solar Cells

Cao¹,

Xu²

2018

Handbook of Photovoltaic Silicon

Self Cite

View full text Add to dashboard Cite

Nanocrsytalline Silicon (nc-Si) is a promising material to develop the next generation of solar cells since it can efficiently absorb the incident solar light in a wide spectral range via the size modulation. The idea of all Si-based tandem type solar cells containing the sub-cells with various bandgaps motivates the extensive studies on the synthesis, physical properties, as well as the device applications of nc-Si material. Currently, the fabrication of size-controllable nc-Si is one of the challenging issues and the utilization of nc-Si in actual photovoltaic device is still at the stage of exploration. In this chapter, we describe the preparation of size-controllable nc-Si dots in multilayer by using thermally annealing or laser crystallization technique to crystallize amorphous Si/SiO 2 or amorphous Si/SiC stacked structures. It is shown that the dot size can be well confined with the initial amorphous Si layer thickness and the size-dependent properties are observed. The chapter focuses on the utilization of prepared nc-Sibased multilayers in prototype hetero-junction solar cells. The photovoltaic properties with different dot size, surrounding insulator materials, as well as the novel grade-sized structures are present. Furthermore, the efforts to improve the device performance by combining light trapping structures with nc-Si-based multilayers are introduced.

show abstract

Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers

Cited by 18 publications

References 23 publications

Nonlinear optical properties of metal nanoparticles: a review

Nonlinear optical properties of metal nanoparticles: a review

Complex investigation of multilayer nanostructure of a-Si/SiO_1.9 by probe and spectroscopic analysis techniques. Visualization of the band structure. Studying of the band structure of the suboxide border layers

Nanocrystalline Silicon-Based Multilayers and Solar Cells

Contact Info

Product

Resources

About

Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers

Cited by 18 publications

References 23 publications

Nonlinear optical properties of metal nanoparticles: a review

Nonlinear optical properties of metal nanoparticles: a review

Complex investigation of multilayer nanostructure of a-Si/SiO1.9 by probe and spectroscopic analysis techniques. Visualization of the band structure. Studying of the band structure of the suboxide border layers

Nanocrystalline Silicon-Based Multilayers and Solar Cells

Contact Info

Product

Resources

About

Complex investigation of multilayer nanostructure of a-Si/SiO_1.9 by probe and spectroscopic analysis techniques. Visualization of the band structure. Studying of the band structure of the suboxide border layers