Interface Stability During Rapid Directional Solidification

Hoglund, David E.; Aziz, Michael J.

doi:10.1557/proc-205-325

Cited by 5 publications

(7 citation statements)

References 20 publications

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“…3]. (68)], and with the experimental data obtained for solidification of the Si-Sn alloy [46]. As it is shown in Fig.…”

Section: Discussionmentioning

confidence: 81%

“…(**) -Data taken from Ref. [46]. Table 2 Discrepancy between theoretical predictions and experiment for the absolute chemical stability of the planar interface in the Si-0.02(at.fraction)Sn alloy Morphological diagram for solidification of binary systems which is illustrating the microstructural transitions "planar front" → "cellular structure" → "dendrites" → "cellular structure" → "planar front", with the increasing of the solidification velocity, V .…”

Section: Discussionmentioning

confidence: 99%

“…Using the parameters of the Si-Sn alloy from Table 1, the model predictions for the function C ∞ (V ) are compared quantitatively with experimental results from Ref. [46]. As is shown in Fig.…”

Section: Comparison With Experimental Datamentioning

confidence: 96%

“…The system of equations (41), (46), and (47) allows one to obtain a relation for the constant front velocity V and the frequency ω of a perturbation in the steady-state regime by excluding of a and b. This relation can be considered as a final form for the condition of marginal stability.…”

Section: The Criterion Of Marginal Stabilitymentioning

confidence: 99%

“…[46]. These authors measured a critical concentration of Sn for interface breakdown in a steady-state solidification after pulsed laser melting.…”

Section: Comparison With Experimental Datamentioning

confidence: 99%

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Linear morphological stability analysis of the solid-liquid interface in rapid solidification of a binary system

Galenko

Danilov

2004

Phys. Rev. E

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The interface stability against small perturbations of the planar solid-liquid interface is considered analytically in linear approximation. Following the analytical procedure of Trivedi and Kurz (Trivedi R, Kurz W. Acta Metall 1986;34:1663), which is advancing the original treatment of morphological stability by Mullins and Sekerka (Mullins WW, Sekerka RF. J Appl Phys 1964;35:444) to the case of rapid solidification, we extend the model by introducing the local nonequilibrium in the solute diffusion field around the interface. A solution to the heat-and masstransport problem around the perturbed interface is given in the presence of the local nonequilibrium solute diffusion. Using the developing local nonequilibrium model of solidification, the self-consistent analysis of linear morphological stability is presented with the attribution to the marginal (neutral) and absolute morphological stability of a rapidly moving interface. Special consideration of the interface stability for the cases of solidification in negative and positive thermal gradients is given. A quantitative comparison of the model predictions for the absolute morphological stability is presented with regard to experimental results of Hoglund and Aziz (Hoglund DE, Aziz MJ. Mat Res Soc Symp Proc 1992;205:325) on critical solute concentration for the interface breakdown during rapid solidification of Si-Sn alloys.

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“…3]. (68)], and with the experimental data obtained for solidification of the Si-Sn alloy [46]. As it is shown in Fig.…”

Section: Discussionmentioning

confidence: 81%

Section: Discussionmentioning

confidence: 99%

Section: Comparison With Experimental Datamentioning

confidence: 96%

Section: The Criterion Of Marginal Stabilitymentioning

confidence: 99%

“…[46]. These authors measured a critical concentration of Sn for interface breakdown in a steady-state solidification after pulsed laser melting.…”

Section: Comparison With Experimental Datamentioning

confidence: 99%

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Linear morphological stability analysis of the solid-liquid interface in rapid solidification of a binary system

Galenko

Danilov

2004

Phys. Rev. E

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Time dependent interface stability during rapid solidification

Greven

Ludwig

Sahm

1999

Journal of Applied Physics

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Erratum: "The structure of the liquid-vapor interface of a gallium-tin binary alloy" [J.The destabilization of a planar solid/liquid interface during resolidification of the molten surface layer of Si-Sn alloys is investigated. Experimental data are compared with the results of a transient numerical stability analysis. In that analysis the time evolution of an infinitesimal sinusoidal perturbation of a planar interface is investigated. For this the concentration profile in the melt as well as the temperature distributions in the melt and solid are divided into a base state and a state due to the perturbation. The highly nonuniform Sn profiles implanted in ͑100͒ silicon samples serve as initial conditions for the numerical calculations. Deviations from thermal equilibrium at the solid/ liquid interface are considered. The critical concentration for breakdown is calculated as a function of solidification velocity and compared with the results of the analytical analysis of Huntley and Davis ͓Acta Metall. Mater. 41, 2025 ͑1993͔͒. It is further investigated whether an analytical steady-state stability analysis can be used to approximately describe the experiments considered.

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Influence of local nonequilibrium on the rapid solidification of binary alloys

Соболев

1998

Tech. Phys.

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Interface Stability During Rapid Directional Solidification

Cited by 5 publications

References 20 publications

Linear morphological stability analysis of the solid-liquid interface in rapid solidification of a binary system

Linear morphological stability analysis of the solid-liquid interface in rapid solidification of a binary system

Time dependent interface stability during rapid solidification

Influence of local nonequilibrium on the rapid solidification of binary alloys

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