Interface roughness scattering in InAs/AlSb quantum wells

Bolognesi, C.R.; Kroemer, H.; English, J. H.

doi:10.1063/1.108221

Cited by 91 publications

(52 citation statements)

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“…The functional dependence of mobility on density for sample C was found to be singularly dependent on interface roughness scattering, with fluctuation height Δ 2.7 and in-plane correlation length Λ 9 nm, similar to previously reported values 25 . Having assumed the same interface roughness parameters apply to sample A and B, it was found that including alloy heterostructures.…”

Section: Manuscriptsupporting

confidence: 72%

Limits to mobility in InAs quantum wells with nearly lattice-matched barriers

et al. 2016

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The growth and the density dependence of the low temperature mobility of a series of twodimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al 1-x Ga x Sb barriers are reported. The electron mobility limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of the possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic sub-band. At low carrier density the functional dependence of the mobility on carrier density provided evidence of coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750,000 cm 2 /Vs was achieved at a at a sample temperature of 2 K. The possible scattering mechanisms leading to the observed density dependence of the mobility are discussed.Heterostructures were grown by molecular beam epitaxy (MBE) on GaSb:Te (001) substrates. Growth rate and composition calibrations were performed prior to the growth of the heterostructures and verified by reflection high energy electron diffraction patterns and oscillations during the growth of the heterostructures. In a previous work it was reported the carrier mobility and single-particle lifetime in InAs/(Al,Ga)Sb heterostructures are sensitive to the dislocation density in the epitaxial layers 18 .In this work the use of the nearly lattice matched substrate and buffer layers was intended to inhibit the formation of extended defects during MBE growth. Fig. 3(a) shows the 002 x-ray diffraction curve which was measured to obtain higher contrast between the multilayers that differed by the substitution on one of the zincblende structure sites. Fig. 3(b) shows the thin film x-ray diffraction reciprocal space map in the vicinity of the 002 and asymmetric 115 Bragg reflections of the GaSb substrate of sample D. In the 115 reciprocal space map, measured in a grazing incidence configuration, the substrate peak and the peak from the AlAs 1-y Sb y buffer layer are well resolved and indicate the buffer was nearly lattice matched but slightly tensile strained 5 to the substrate (y ~ 0.9). The threading dislocation densities of the films were measured by both etch pits using a solution of HF:H 2 O 2 :H 2 SO 4 :H 2 O similar to that reported by Aifer and Maximenko 19 and by electron channeling contrast imaging (ECCI) using a backscattering geometry in a field emission scanning electron microscope. ECCI analysis was performed using several diffraction vectors to mitigate unintentionally satisfying the invisibility criterion where the Burger's vector for a given dislocation is perpendicular to the diffraction vector. Fig. 3(b) shows an ECCI micrograph measured from the surface of the MBE grown film of sample D.Several lines of enhanced contrast are interpreted ...

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Section: Manuscriptsupporting

confidence: 72%

Limits to mobility in InAs quantum wells with nearly lattice-matched barriers

et al. 2016

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“…As the channel thickness increases, the maximum of the wave function of electrons is displaced away from the upper interface of the QW, reducing the interactions of electrons with remote donor impurities. As demonstrated by Bolognesi et al, 12 interface roughness scattering can also be significant at room temperature for thin QW on a metamorphic buffer. We measured by atomic force microscopy a root mean square roughness of about 5 nm on a 25 m 2 image ͓the surface exhibits height fluctuations of about 8 nm on a lateral scale of about 500 nm ͑Ref.…”

Section: Discussionmentioning

confidence: 75%

Electronic properties of the high electron mobility Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructure

Desplanque

Vignaud

Godey

et al. 2010

Journal of Applied Physics

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Electronic properties of the high electron mobility Al0.56 In0.44 Sb/Ga0.5 In0.5 Sb heterostructure Desplanque, L.; Vignaud, D.; Godey, S.; Cadio, E.; Plissard, S.R.; Wallart, X.; Liu, P.; Sellier, H. Published in:Journal of Applied Physics DOI:10.1063/1.3475709Published: 01/01/2010 Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Desplanque, L., Vignaud, D., Godey, S., Cadio, E., Plissard, S. R., Wallart, X., ... Sellier, H. (2010). Electronic properties of the high electron mobility Al0.56 In0.44 Sb/Ga0.5 In0.5 Sb heterostructure. Journal of Applied Physics, 108(4), 043704-1/6. [043704]. DOI: 10.1063/1.3475709 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We measure by means of x-ray photoemission spectroscopy, photoluminescence, and Hall effect measurements the key parameters involved in the achievement of a high speed and very low power consumption field effect transistor: conduction and valence band offsets, energy gaps of channel and barrier materials, electron effective mass, and density of states in the channel. We observe the influence of the quantum well thickness on the electron Hall mobility and sheet carrier density. A type I heterostructure exhibiting a room temperature electron mobility of 25 000 cm 2 V −1 s −1 with a sheet carrier density of 1.5ϫ 10 12 cm −2 is demonstrated for the widest channel. We show that the thickness of the channel influences both Hall density and mobility through a multisubband occupancy. We discuss about the scattering mechanisms limiting the mobility in the second subband.

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“…Bolognesi et al [8] demonstrated that interface roughness is a key parameter limiting the low-temperature mobility of electrons in AlSb/InAs 2 DEG. Kroemer's group has also shown that the roughness is different using an AlSb or a GaSb buffer grown on a GaAs substrate [3].…”

Section: Results Ofmentioning

confidence: 99%