Interface Resistance of an SOFC Cathode with a Pr_1−xTb_xO_2−d Active Layer

Abstract

We investigated the use of Pr1-xTbxO2-d (x=0.0-1.0) material for active layer in SOFC cathode. Pr1-xTbxO2-d (x=0.0-1.0) in single-phase fluorite structure were successfully synthesized. They are solid solution of Pr6O11 and Tb4O7. When the x is between 0.3 and 0.6, the phase transition between room temperature and 800oC were eliminated Coin cells with GDC electrolyte and Pr1-xTbxO2-d (x=0.0-1.0) active layer and LaNi0.6Fe0.4O3 (LNF) current collecting layer were made to clarify the effect of this active layer. The interface resistance of these cathodes was measured with an AC impedance method at 800oC. The cathodes withPr1-xTbxO2-d (for all composition) active layer performed better than that of reference cathode, which has no active layer (consisting only LNF layer).