Interface Reactions of B[sub 2]O[sub 3]-Si System and Boron Diffusion into Silicon

Arai, Eisuke; Nakamura, Hiroaki; Terunuma, Y.

doi:10.1149/1.2403611

Cited by 66 publications

(54 citation statements)

References 11 publications

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“…This method is very similar to that proposed by Taylor (9), and gives profiles substantially identical to those obtained with the first, more conventional method. At the end of the sputter etch the electron beam was focused on the edge of the sputtering crater and then scanned on a line across it.…”

Section: E Desupporting

confidence: 56%

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AES Study of Boron Diffusion in Silicon from a Boron Nitride Source with Hydrogen Injection

Pignatel¹,

Queirolo²

1979

J. Electrochem. Soc.

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Boron diffusion in silicon from a boron nitride source with a doping step in hydrogen was characterized with Auger electron spectrometry and depth profiling. The thickness and the composition of the boron-rich layer (BRL) which grows in this process were studied as a function of the oxygen concentration in the gas phase in the final cooling step. Oxygen diffuses to and through the BRL to the BRL/Si interface: The silicon in the boron-rich layer is preferentially oxidized, and a silicon dioxide layer grows for a high enough oxygen concentration. A chemical etch in hydrofluoric acid can then remove this oxide layer and lift away the remaining BRL. A range in oxygen concentration was found for which the doping level is practically the same as for sample diffused with no oxygen in the cooling step, but subjected to an oxidation at low temperature, which is the usual method for the BRL removal.Nonhydrogen process (1, 2).--The silicon wafers and the boron nitride slices are loaded in a suitable boat and introduced into the furnace at the deposition temperature in a nitrogen ambient. * Electrochemical Society Active Member.

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Section: E Desupporting

confidence: 56%

“…Arai et al (9) studied the compound produced during a boron deposition from various sources, and concluded that it was SiB~ and/or SiB6. Arai et al (9) studied the compound produced during a boron deposition from various sources, and concluded that it was SiB~ and/or SiB6.…”

Section: Discussionmentioning

confidence: 99%

AES Study of Boron Diffusion in Silicon from a Boron Nitride Source with Hydrogen Injection

Pignatel¹,

Queirolo²

1979

J. Electrochem. Soc.

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“…On the other hand, it is suspected that the generated silicon interstitials can be consumed by the BRL formation because BRL is known as a layer of silicon borides. [25][26][27] Then, the diffusivity decreases when BRL is formed at the surface. From this reason, C s must be replaced by C seff which is the effective surface boron concentration to have ability to generate the boron-silicon interstitial pairs and Eq.…”

Section: Boron Diffusion Modelmentioning

confidence: 99%

Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

Kurachi¹,

Yoshioka

2015

Jpn. J. Appl. Phys.

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An analytical boron diffusivity model in silicon for thermal diffusion from a boron silicate glass (BSG) film has been proposed in terms of enhanced diffusion due to boron-silicon interstitial pair formation. The silicon interstitial generation is considered to be a result of the silicon kick-out mechanism by the diffused boron at the surface. The additional silicon interstitial generation in the bulk silicon is considered to be the dissociation of the diffused pairs. The former one causes the surface boron concentration dependent diffusion. The latter one causes the local boron concentration dependent diffusion. The calculated boron profiles based on the diffusivity model are confirmed to agree with the actual diffusion profiles measured by secondary ion mass spectroscopy (SIMS) for a wide range of the BSG boron concentration. This analytical diffusivity model is a helpful tool for p+ boron diffusion process optimization of n-type solar cell manufacturing.

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“…However, the particular challenge for boron diffusion process is the formation of Si-B x * corresponding author; e-mail: elamrani@msn.com compound named boron rich layer (BRL) [6][7][8][9][10] on the surface. This layer is detrimental for the surface and bulk carrier lifetime [11,12] and its removal is problematic [13].…”

Section: Introductionmentioning

confidence: 99%

Design of Solar Cells p⁺/n Emitter by Spin-On Technique

et al. 2017

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In this paper spin-on dopant diffusion has been investigated as a technique for fabrication of p + /n monocrystalline silicon solar cell emitters. A homogeneous spreading onto the front wafer surface has been achieved by using 2 ml of boron-dopant solution and three-step spin-profile. Study of the wafers stacking arrangement has revealed that the highest doping level and the best emitter sheet resistance uniformity were obtained using the back-to-back wafers arrangement. The N2/O2 gas ratio variation during the diffusion process has shown that a higher percentage of nitrogen yields a slightly lower emitter sheet resistance. Study on temperature dependence of as-processed emitter resistivity revealed that 910• C results in targeted sheet resistance of around 48 Ω/sq. Using these preliminary experimental results, a batch of 6 silicon wafers was processed. After BSG and BRL chemical removal, the batch average sheet resistance of the emitter was 49.50 Ω/sq. The uniformity of a wafer and of the batch was below 7% and 13%, respectively. The ECV and SIMS depth profiling have shown the electrically active and the total boron surface concentration of 1.5 × 10 20 atoms/cm 3 and 2.5 × 10 20 atoms/cm 3 , respectively. The junction depth was around 0.3 µm. Finally, by increasing the oxygen flow rate we reached an average sheet resistance of 51 Ω/sq. and a junction depth of 0.35 µm.

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Interface Reactions of B[sub 2]O[sub 3]-Si System and Boron Diffusion into Silicon

Cited by 66 publications

References 11 publications

AES Study of Boron Diffusion in Silicon from a Boron Nitride Source with Hydrogen Injection

AES Study of Boron Diffusion in Silicon from a Boron Nitride Source with Hydrogen Injection

Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

Design of Solar Cells p⁺/n Emitter by Spin-On Technique

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Interface Reactions of B[sub 2]O[sub 3]-Si System and Boron Diffusion into Silicon

Cited by 66 publications

References 11 publications

AES Study of Boron Diffusion in Silicon from a Boron Nitride Source with Hydrogen Injection

AES Study of Boron Diffusion in Silicon from a Boron Nitride Source with Hydrogen Injection

Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

Design of Solar Cells p+/n Emitter by Spin-On Technique

Contact Info

Product

Resources

About

Design of Solar Cells p⁺/n Emitter by Spin-On Technique