Interface properties of MIS structures based on hetero-epitaxial graded-gap Hg1-xCdxTe with CdTe interlayer created in situ during MBE growth

Войцеховский, А. В.; Nesmelov, S. N.; Dzyadukh, S. М.; Варавин, В. С.; Dvoretsky, S. A.; Михайлов, Н. Н.; Yakushev, M. V.; Sidorov, G. Yu.

doi:10.1016/j.spmi.2017.08.025

Cited by 5 publications

(1 citation statement)

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“…With the development of passivation technique, the film deposition method, such as atomic layer deposition (ALD), was utilized to prepare passivation layer (Al2O3) on uneven MCT device surface. Nevertheless, the research result indicates that a graded-gap CdTe intermediate layer is needed to be grown between the mismatched upper passivation layer and the MCT bulk epilayer to reduce slow and fast surface states [6]. Thus, the formation of graded-gap CdTe layer on MCT epilayer is significant for the acquisition of high-quality surface passivation.…”

Section: Introductionmentioning

confidence: 99%

Diffusion of Dopants and Components in Arsenic-Implanted CdTe/HgCdTe Structures under Different High-Temperature Annealing Conditions

Shi¹,

Lin²,

Wei³

2019

The 15th International Workshop on Advanced Infrared Technology and Applications

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The CdTe cap layers were grown on CdZnTe-substrated HgCdTe (MCT) LPE epilayers by magnetron sputtering and thermal evaporation. The diffusion behaviors of Cd & Hg components and impurities (As or In) in these CdTe/MCT structures subjected to As ion implantation and various Hg overpressure annealing processes were investigated. The conclusions indicate that the defects at the CdTe/MCT interface could produce the accumulations of impurities and the distributions of induced damages (related to the cap layer structure) have a significant influence on the diffusion of components and impurities. By adjusting annealing procedures, the diffusions of components and impurities can be controlled.

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Section: Introductionmentioning

confidence: 99%