Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals

Park, Seonyoung; Kim, Seong Yeoul; Choi, Yun‐Sang; Kim, Myung-Jun; Shin, Hyunjung; Kim, Jiyoung; Choi, Woong

doi:10.1021/acsami.6b01568

Cited by 80 publications

(74 citation statements)

References 20 publications

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“…Secondly, high energy photons could also influence the oxidization state and crystalline situation in the oxides . Therefore the chemical and microstructural properties of the objects have been further investigated, as shown in Figure .…”

Section: Resultsmentioning

confidence: 99%

Efficient Inverted Planar Perovskite Solar Cells Using Ultraviolet/Ozone‐Treated NiO_x as the Hole Transport Layer

et al. 2019

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Nickel oxide (NiOx) has exhibited great potential as a hole transport layer (HTL) for fabricating efficient and stable perovskite solar cells (PSCs). However, it has been greatly limited by its fabrication and manipulation process. In this work, a simple processing method on an ultrathin electrochemical mesoporous NiOx film manipulated by controllable ultraviolet/ozone (UVO) treatmentis employed; the duration of UVO treatment on the NiOx film significantly affects the photovoltaic properties of the PSCs. When the exposure duration increases, the wettability, electrical conductivity, nonstoichiometry, and valence band energy of the NiOx film are improved with varying degrees. Besides, the perovskite grain size, recombination resistance at the perovskite/NiOx interface, and build‐in potential of the device also increase, resulting in higher short‐circuit current density (JSC) and open‐circuit voltage (VOC). Combining these factors together, an optimal exposure time of UVO treatment on the NiOx film has been achieved at 5 min, which results in a significantly high performance with an efficiency of 19.67%, large VOC (>1.1 V), and JSC (>23 mA cm−2). Furthermore, the experimental results are coincide well with simulation results on the different corresponding subjects. Hopefully, this work could facilitate material manipulation toward scalable, high efficiency, and stable solar cells.

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Section: Resultsmentioning

confidence: 99%

Efficient Inverted Planar Perovskite Solar Cells Using Ultraviolet/Ozone‐Treated NiO_x as the Hole Transport Layer

et al. 2019

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“…Here, the recent demonstration of a natural thin‐body MoS 2 FET with an effective channel length of ≈ 3.9 nm has facilitated research on 2D layered channels due to overcoming the scaling limit of ≈ 5 nm for Si gate length . Although the dangling‐bond‐free surface of the layered channel is expected to ideally provide an electrically inert interface, there are many reports on the wide range of interface state densities ( D it ) from 10 11 to 10 13 eV −1 cm −2 for high‐ k top‐gate n ‐MoS 2 FET in reality, which must be reduced to improve the device performance. To date, several physical origins for D it have been proposed, which are summarized in Figure a.…”

Section: Introductionmentioning

confidence: 99%

Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS₂ Field‐Effect Transistors

Fang

Toyoda

Taniguchi

et al. 2019

Adv Funct Materials

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2D materials are promising to overcome the scaling limit of Si field-effect transistors (FETs). However, the insulator/2D channel interface severely degrades the performance of 2D FETs, and the origin of the degradation remains largely unexplored. Here, the full energy spectra of the interface state densities (D it ) are presented for both n-and p-MoS 2 FETs, based on the comprehensive and systematic studies, i.e., full rage of channel thickness and various gate stack structures with h-BN as well as high-k oxides. For n-MoS 2 , D it around the mid-gap is drastically reduced to 5 × 10 11 cm −2 eV −1 for the heterostructure FET with h-BN from 5 × 10 12 cm −2 eV −1 for the high-k top-gate. On the other hand, D it remains high, ≈10 13 cm −2 eV −1 , even for the heterostructure FET for p-MoS 2 . The systematic study elucidates that the strain induced externally through the substrate surface roughness and high-k deposition process is the origin for the interface degradation on conduction band side, while sulfur-vacancy-induced defect states dominate the interface degradation on valance band side. The present understanding of the interface properties provides the key to further improving the performance of 2D FETs.

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“…[41,42] Therefore, the Al 2 O 3 clusters bind the intrinsic defects, including the V S in the MoS 2 monolayer. Different coverages of Al 2 O 3 are directly deposited on the top of the MoS 2 device at 373 K, using trimethyl aluminum (TMA) and H 2 O precursors.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Probing the Electronic Properties of Monolayer MoS₂ via Interaction with Molecular Hydrogen

Rezende

Cadore

Gadelha

et al. 2018

Adv Elect Materials

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This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H2) and monolayer MoS2 field effect transistors (MoS2 FET), aiming for sensing application. The MoS2 FET exhibits a response to H2 that covers a broad range of concentration (0.1–90%) at a relatively low operating temperature range (300–473 K). Most important, H2 sensors based on MoS2 FETs show desirable properties such as full reversibility and absence of catalytic metal dopants (Pt or Pd). The experimental results indicate that the conductivity of MoS2 monotonically increases as a function of the H2 concentration due to a reversible charge transferring process. It is proposed that such process involves dissociative H2 adsorption driven by interaction with sulfur vacancies in the MoS2 surface (VS). This description is in agreement with related density functional theory studies about H2 adsorption on MoS2. Finally, measurements on partially defect‐passivated MoS2 FETs using atomic layer deposited aluminum oxide consist of an experimental indication that the VS plays an important role in the H2 interaction with the MoS2. These findings provide insights for future applications in catalytic process between monolayer MoS2 and H2 and also introduce MoS2 FETs as promising H2 sensors.

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Interface Properties of Atomic-Layer-Deposited Al₂O₃ Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS₂ Crystals

Cited by 80 publications

References 20 publications

Efficient Inverted Planar Perovskite Solar Cells Using Ultraviolet/Ozone‐Treated NiO_x as the Hole Transport Layer

Efficient Inverted Planar Perovskite Solar Cells Using Ultraviolet/Ozone‐Treated NiO_x as the Hole Transport Layer

Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS₂ Field‐Effect Transistors

Probing the Electronic Properties of Monolayer MoS₂ via Interaction with Molecular Hydrogen

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Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals

Cited by 80 publications

References 20 publications

Efficient Inverted Planar Perovskite Solar Cells Using Ultraviolet/Ozone‐Treated NiOx as the Hole Transport Layer

Efficient Inverted Planar Perovskite Solar Cells Using Ultraviolet/Ozone‐Treated NiOx as the Hole Transport Layer

Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS2 Field‐Effect Transistors

Probing the Electronic Properties of Monolayer MoS2 via Interaction with Molecular Hydrogen

Contact Info

Product

Resources

About

Interface Properties of Atomic-Layer-Deposited Al₂O₃ Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS₂ Crystals

Efficient Inverted Planar Perovskite Solar Cells Using Ultraviolet/Ozone‐Treated NiO_x as the Hole Transport Layer

Efficient Inverted Planar Perovskite Solar Cells Using Ultraviolet/Ozone‐Treated NiO_x as the Hole Transport Layer

Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS₂ Field‐Effect Transistors

Probing the Electronic Properties of Monolayer MoS₂ via Interaction with Molecular Hydrogen