Interface optical phonons in double-channel AlGaN/GaN heterostructures: The ternary mixed crystal effect and size effect

Abstract

Considering the anisotropy of wurtzite semiconductors, the interface optical phonons in double-channel AlGaN/GaN heterostructures are investigated by using a dielectric continuous model and transfer matrix method. Also, the ternary mixed crystal effect and size effect on the dispersion relations and electrostatic potentials of phonons are analyzed in detail. The results show that there are six branches of interface phonon modes in a double-channel heterostructure. For some values of Al composition, however, the phonon mode with the highest frequency may not exist, especially when the thicknesses of materials and the wave vectors of phonons are small. The ternary mixed crystal effect and size effect not only influence the values of phonon frequency and electrostatic potential, but also change the vibration mode of interface phonons. This suggests that the interface phonon vibrations can be controlled to reduce their adverse effects by changing the Al composition of AlGaN and the thickness of each layer in a double-channel heterostructure.