Interface optical anisotropy in a heterostructure with different cations and anions

Ivchenko, E. L.; Торопов, А. А.; Voisin, P.

doi:10.1134/1.1130649

Cited by 56 publications

(64 citation statements)

References 10 publications

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“…In the case of a real interface and allowing fluctuations of the alloy composition in the interface plane, the leftand right-interface contributions to the hh-lh mixing will not compensate each other. These effects are of a particular importance in the structures with "no common anion" heterointerfaces with enlarged value of the mixing parameter t [22,24].…”

Section: Discussionmentioning

confidence: 99%

“…Here (if not specified differently) we use for t the interpolated values from Ref. [24]. The hole miniband spectra of GaAs/AlGaAs SL allowing X − Y mixing with t = 0.6 is shown for k|| (110) in the inset of Fig.…”

Section: Boundary Conditionsmentioning

confidence: 99%

“…The role of the interface originated asymmetry depends on the value of the mixing parameter t which was estimated for some heterostructure interfaces in the tight binding approximation [20,21,24]. Here (if not specified differently) we use for t the interpolated values from Ref.…”

Section: Boundary Conditionsmentioning

confidence: 99%

“…The value of mixing parameter t = 0.6 is taken by an interpolation of the values given in Ref. [24]. Note here that since the term couple lh and hh states with the opposite parity, the major effect comes from the hh2 and lh1 miniband interaction.…”

Section: Interface Effectsmentioning

confidence: 99%

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Optical spin orientation in strained superlattices

Subashiev

Gerchikov

Ipatov

2004

Journal of Applied Physics

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Optical orientation in the strained semiconductor superlattices is investigated theoretically. The dependence of the features in spinpolarization spectra on the structure parameters is clarified. The value of polarization in the first polarization maximum in the SL structures is shown to grow with the splitting between the hh-and lh-states of the valence band, the joint strain and confinement effects on the hh1-lh1 splitting being strongly influenced by the tunneling in the barriers. In strained structures with high barriers for the holes initial polarization can exceed 95 %. Calculated polarization spectra are close to the experimental spectra of polarized electron emission.

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Section: Discussionmentioning

confidence: 99%

Section: Boundary Conditionsmentioning

confidence: 99%

Section: Boundary Conditionsmentioning

confidence: 99%

Section: Interface Effectsmentioning

confidence: 99%

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Optical spin orientation in strained superlattices

Subashiev

Gerchikov

Ipatov

2004

Journal of Applied Physics

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“…This contribution is an order of magnitude larger than the corresponding bulk term, and it should give rise to an optical anisotropy comparable to (although smaller than) that seen in recent experiments on the quantum-well Pockels effect. DOI: 10.1103/PhysRevLett.86.2641 The discovery of the quantum-well Pockels effect by Kwok et al [1] has attracted considerable interest in the semiconductor physics community over the past several years [2][3][4][5][6][7][8]. This effect involves a dramatic increase in optical anisotropy caused by the reduction in crystal symmetry (from T d to C 2y ) at a heterojunction between two zinc-blende-type semiconductors.…”

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confidence: 99%

Strong Linear-kValence-Band Mixing at Semiconductor Heterojunctions

Foreman

2001

Phys. Rev. Lett.

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This paper examines linear-k terms in the G 8 valence-band Hamiltonian for heterostructures of zincblende-type semiconductors. In bulk crystals such terms are known to be extremely small, due to their origin as relativistic perturbations from d and f orbitals. However, in heterostructures there is a nonvanishing contribution from p orbitals. This contribution is an order of magnitude larger than the corresponding bulk term, and it should give rise to an optical anisotropy comparable to (although smaller than) that seen in recent experiments on the quantum-well Pockels effect. DOI: 10.1103/PhysRevLett.86.2641 The discovery of the quantum-well Pockels effect by Kwok et al. [1] has attracted considerable interest in the semiconductor physics community over the past several years [2][3][4][5][6][7][8]. This effect involves a dramatic increase in optical anisotropy caused by the reduction in crystal symmetry (from T d to C 2y ) at a heterojunction between two zinc-blende-type semiconductors. It is now widely accepted that in type-I systems, the quantum-well Pockels effect is primarily a consequence of the mixing of light and heavy holes that arises from the rapid change in crystalline potential at an abrupt junction. Such microscopic interface effects can be described simply by adding a d-function potential to the standard valence-band envelope-function Hamiltonian [3,5,[9][10][11][12].It is, of course, well known that linear-k mixing of the G 8 valence states [13][14][15][16][17] must also contribute to the Pockels effect. However, apart from a few early studies [2,18] (which appeared before the significance of interfaceinduced mixing was known), linear-k mixing has been neglected in all theoretical models of the quantum-well Pockels effect. This is because there is universal agreement that such mixing is far too weak to account for the observed optical anisotropy in quantum wells. Indeed, the neglect of linear-k mixing is so common that it has become an automatic first step in almost all valence-band calculations.In this paper it is shown that, although the bulk mixing is indeed very small [19], linear-k valence-band mixing is greatly enhanced in the vicinity of a heterojunction. The G 8 linear-k mixing at an interface is an order of magnitude larger than in the bulk, and it should yield an optical anisotropy comparable to (but smaller than) that observed experimentally. (This conclusion is based on a comparison of the present Hamiltonian with similar Hamiltonians used in earlier studies; no optical spectra are calculated here.) Therefore, this source of mixing should be included in theoretical models of the quantum-well Pockels effect. It may or may not be significant in other situations, but the neglect of such mixing should no longer be considered automatic.The reason why interface linear-k mixing is so much larger than bulk mixing can be understood from simple symmetry arguments. Linear-k terms in the G 8 Hamiltonian arise to lowest order as second-order perturbations involving one matrix element of the spin-o...

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Interface Properties and in-Plane Linear Photoluminescence Polarization in Highly Excited Type-II ZnSe/BeTe Heterostructures

Максимов

Zaı̆tsev

Dorozhkin

et al. 2002

phys. stat. sol. (b)

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Properties of interfaces with no-common atom in type-II ZnSe/BeTe heterostructures are studied with polarization spectroscopy. Radiative recombination and its polarization anisotropy have been found to depend crucially on the interface configuration and excitation power. Effects of external and internal electric fields on the in-plane polarization are studied both numerically and experimentally at low and high levels of photoexcitation density.

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Interface optical anisotropy in a heterostructure with different cations and anions

Cited by 56 publications

References 10 publications

Optical spin orientation in strained superlattices

Optical spin orientation in strained superlattices

Strong Linear-kValence-Band Mixing at Semiconductor Heterojunctions

Interface Properties and in-Plane Linear Photoluminescence Polarization in Highly Excited Type-II ZnSe/BeTe Heterostructures

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