Interface of ultrathin HfO2 films deposited by UV-photo-CVD

Fang, Q.; Zhang, J.-Y.; Wang, Z.; Modreanu, M.; O’Sullivan, Barry; Hurley, Paul K.; Leedham, T.L.; Hywel, D.; Audier, M.; Jiménez, Carmen; Sénateur, J.P.; Boyd, Ian W.

doi:10.1016/j.tsf.2003.11.186

Cited by 57 publications

(23 citation statements)

References 11 publications

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“…They concluded that these small shoulders correspond to Hf-Si bonding [24]. Similarly, Fang et al declared that the Hf 4f peak shifted to lower binding energy as well as an additional feature appeared at 14.85 eV corresponding to Hf-Si bonds at the interface [25]. It is clear from Fig.…”

Section: Xps Depth Profiling Spectrum For Chemical Analysesmentioning

confidence: 82%

“…4(a) that all levels containing hafnium-oxide can be decomposed into two main peaks. This situation for HfO 2 is explained as a spin-orbit splitting of 1.6 eV at 16.90 and 18.50 eV, respectively, for Hf 4f 7/2 and Hf 4f 5/2 [6]. Nevertheless, these peaks, in the vicinity of Si, shift to higher binding energies, i.e.…”

Section: Xps Depth Profiling Spectrum For Chemical Analysesmentioning

confidence: 95%

“…Having very close location but not at the expected exact position of natural oxide of SiO 2 (1075 cm − 1 ), however, implies that this interfacial oxide layer is in the form of suboxide of Si, i.e. SiO x with x b 2, instead of natural oxide form [6]. ) [17].…”

Section: Basic Theory Of Spectroscopic Ellipsometermentioning

confidence: 97%

“…A number of various film growth techniques have been used to fabricate high-κ materials such as thermal oxidation [5], a variety of chemical vapor deposition techniques [6], ion beam deposition [7], atomic layer deposition [8], pulsed laser deposition [9], laser oxidation [10], remote plasma oxidation [11], DC and RF sputtering [5,12]. Since each method has some advantages and disadvantages, it is not yet clear which method would be the best choice for device applications.…”

Section: Introductionmentioning

confidence: 99%

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Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films

et al. 2011

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HfO 2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate. The effects of O 2 /Ar ratio, substrate temperature, sputtering power on the structural properties of HfO 2 grown films were studied by Spectroscopic Ellipsometer (SE), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, and X-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiO x suboxide layer at the HfO 2 /Si interface is unavoidable. The HfO 2 thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O 2 /Ar gas ratio during sputtering, and substrate temperature. XRD spectra show that the deposited films have (111) monoclinic phase of HfO 2 , which is also supported by FTIR spectra. XPS depth profiling spectra shows that highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO 2 to form HfO 2 , leaving Si-Si bonds behind.

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Section: Xps Depth Profiling Spectrum For Chemical Analysesmentioning

confidence: 82%

Section: Xps Depth Profiling Spectrum For Chemical Analysesmentioning

confidence: 95%

Section: Basic Theory Of Spectroscopic Ellipsometermentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films

et al. 2011

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show abstract

“…A number of compatible methods have been developed to fabricate high-materials such as thermal oxidation [8], a variety of chemical vapor deposition techniques [9], ion beam deposition [10], atomic layer deposition [11,12], pulsed laser deposition [13], laser oxidation [14,15], remote plasma oxidation [16], dc and rf sputtering [8,17,18]. Among them, magnetron sputtering technique has attracted special attention due to its high growth rate, good control over physical properties of grown film and ability to grow in amorphous phase.…”

Section: Introductionmentioning

confidence: 99%

Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film

Cantaş¹,

Aygün²,

Turan³

2014

Applied Surface Science

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a b s t r a c tHigh-hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron sputtering technique. To avoid formation of an undesired interfacial suboxide layer between Si and highfilm, prior to HfO 2 deposition, a thin Hf buffer layer was deposited on p-type (1 0 0) Si substrate at room temperature. Effect of oxygen gas quantity in the O 2 /Ar gas mixture was studied for the optical and structural properties of grown HfO 2 high-thin films. The grown thin oxide films were characterized optically using spectroscopic ellipsometer (SE) in detail. Crystal structure was studied by grazing incidence X-ray diffractometer (GIXRD) technique, while bonding structure was obtained by Fourier transform infrared spectroscopy (FTIR) analyses. In agreement with GIXRD and FTIR analyses, SE results show that any increment above ideal quantity of oxygen content in the gas mixture resulted in decrements in the refractive index and thickness of HfO 2 dielectric film, while increments in SiO 2 thickness. It is apparent from experimental results that oxygen to argon gas ratio needs to be smaller than 0.2 for a good film quality. The superior structural and optical properties for grown oxide film were obtained for O 2 /Ar gas ratio of about 0.05-0.1 combined with ∼30 W constant rf sputtering power.

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UV Engineering of High‐ k Thin Films

Boyd

2012

High‐k Gate Dielectrics for CMOS Technology

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Interface of ultrathin HfO2 films deposited by UV-photo-CVD

Cited by 57 publications

References 11 publications

Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films

Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films

Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film

UV Engineering of High‐ k Thin Films

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