Interface mixing in Ta/Si bilayers with Ar ions

Ion beam induced surface and interface engineering

“…The studies were made by introducing into the n-region of Si junction diode with 100 MeV Si, [70][71][72][73][74][75][76][77][78][79][80] MeV O, 65 MeV B and 35 MeV Li ions. In this way, defects could be induced at different locations in the n-side covering a range from 35 to 170 µm away from the contact of n-side.…”

Mixing and Silicide Formation during Xe-Ion Beam Irradiations of Ta/Si Bilayers

“…6 as a function of the ion fluence F. In the present case, a linear dependence of Ds 2 with F is clearly visible, giving the mixing rate Ds 2 =F 8:5 AE 0:9 nm 4 : When estimating the average damage energy density F D 3 keV/nm at the Ta/Si interface by means of the TRIM95 program, the mixing/reaction efficiency becomes Ds 2 =FF D 2:8 AE 0:3 nm 5 =keV at room temperature. A linear growth of the mixed layer containing a compound phase had previously been observed in the Ta/Si system during Ar -ion irradiations at RT [14] and also in many other metal/semiconductor systems subject to ion irradiations [10,11]. Moreover, the variance Ds 2 is generally found to vary linearly with annealing time during thermal treatment at a fixed temperature [1,5].…”

“…The variance Ds 2 of the mixed/reacted layer was found to be proportional to the ion fluence F. The measured mixing/reaction rate, Ds 2 =F 8:5 AE 0:9 nm 4 ; and mixing efficiency, Ds 2 =FF D 2:8 AE 0:3 nm 5 =keV, were explained with the help of the compound formation model in the presence of global thermal spikes. Hence when increasing the ion mass from 40 Ar [14] to 132 Xe, TaSi 2 compound formation appears to proceed from local to global spike. …”

“…Therefore, we calculated the mixing rate using both models, namely compound formation under local [11] and global [10] spikes. It may be noted that the mixing rates [14] obtained during Ar -ion irradiations of Ta/Si bilayers were explained by compound formation under local thermal spikes. If the compound A a B b (in the present case TaSi 2 ) at the interface of an A/B bilayer (where A Ta and B Si) is formed during ion beam irradiation, the mixing/reaction rate [10,11] can be written as…”

“…The calculated and measured mixing rates are compared in Table 1. Also the results [14] obtained during 120 keV Ar ion iradiations are given. It is seen from the table that the mixing rate calculated from the compound formation model under global spike (Eq.…”