Thermal stability of Ti 3 SiC 2 was investigated at 1200-1400°C in hydrogen atmosphere for 3 hours. The hydrogenation mechanism was clarified by a combination of X-ray diffraction, scanning electron microscope, Raman spectroscopy and first principles calculation. At 1200°C, a dense and uniform TiSi 2 layer formed on the sample surface, which originated from both the preferable lose of silicon from the Ti 3 SiC 2 substrate and the dissociation of Ti 3 SiC 2 . As temperature increased to 1300°C, TiSi 2 layer began to scale off and presented laminated Ti 3 SiC 2 grains beneath this layer, which indicated preferential hydrogenation occurred along the basal planes. This phenomenon was ascribed to the fact that the introduction of H interstitial atom weakened the combination between titanium and silicon interface layer, which was confirmed by first principles calculations. In addition, the formation of TiSi 2 owing to the dissociation of Ti 3 SiC 2 caused the volume expansion after hydrogenation, resulting in that majority of TiSi 2 layer spelled off at 1400°C.