Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

Xu, Zhicheng; Chen, Jianxin; Wang, Fangfang; Zhou, Yi; Jin, Chuan; Li, He

doi:10.1016/j.jcrysgro.2013.10.024

Cited by 13 publications

(4 citation statements)

References 15 publications

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“…Therefore, 2-D layer growth mode can be more readily obtained. 60 In addition, we observe a redshift of approximately 15 meV in P1 for Sample A compared to Sample B. The origin of the redshift behavior in P1 for Sample A can be attributed to the difference in the SL periodic thickness as measured by XRD, 46 a similar feature was also commented in the past elsewhere, 43 or atomic intermixing.…”

Section: Resultssupporting

confidence: 73%

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Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices

Alshahrani

Kesaria

Jiménez

et al. 2023

ACS Appl. Mater. Interfaces

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Incorporating an intentional strain compensating InSb interface (IF) layer in InAs/GaSb type-II superlattices (T2SLs) enhances device performance. But there is a lack of studies that correlate this approach’s optical and structural quality, so the mechanisms by which this improvement is achieved remain unclear. One critical issue in increasing the performance of InAs/GaSb T2SLs arises from the lattice mismatch between InAs and GaSb, leading to interfacial strain in the structure. Not only that but also, since each side of the InAs/GaSb heterosystem does not have common atoms, there is a possibility of atomic intermixing at the IFs. To address such issues, an intentional InSb interfacial layer is commonly introduced at the InAs-on-GaSb and GaSb-on-InAs IFs to compensate for the strain and the chemical mismatches. In this report, we investigate InAs/GaSb T2SLs with (Sample A) and without (Sample B) InSb IF layers emitting in the mid-wavelength infrared (MWIR) through photoluminescence (PL) and band structure simulations. The PL studies indicate that the maximum PL intensity of Sample A is 1.6 times stronger than that of Sample B. This could be attributed to the effect of migration-enhanced epitaxy (MEE) growth mode. Band structure simulations understand the impact of atomic intermixing and segregation at T2SL IFs on the bandgap energy and PL intensity. It is observed that atomic intermixing at the IFs changes the bandgap energy and significantly affects the wave function overlap and the optical property of the samples. Transmission electron microscopy (TEM) measurements reveal that the T2SL IFs in Sample A are very rough compared to sharp IFs in Sample B, indicating a high possibility of atomic intermixing and segregation. Based on these results, it is believed that high-quality heterostructure could be achieved by controlling the IFs to enhance its structural and compositional homogeneities and the optical properties of the T2SLs.

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Section: Resultssupporting

confidence: 73%

“…This is because the cations can migrate longer distances in the MEE growth mode without anions. Therefore, 2-D layer growth mode can be more readily obtained . In addition, we observe a redshift of approximately 15 meV in P1 for Sample A compared to Sample B.…”

Section: Resultsmentioning

confidence: 62%

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices

Alshahrani

Kesaria

Jiménez

et al. 2023

ACS Appl. Mater. Interfaces

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“…Since performance of T2SL device is strongly dependent on T2SL structural perfection, the information on interfacial roughness, compositional profile (i.e., interfacial intermixing), and interfacial bonding across the noncommon anion layers of InAs/GaSb T2SL is very important. Growth conditions of T2SLs have been optimized by various research groups to improve the interface quality [50][51][52][53][54]. Steinshnider and colleagues [55][56][57][58] utilized the cross-sectional scanning tunneling microscopy (XSTM) to identify the interfacial bonding and to facilitate direct measurements of the compositional grading at the GaSb/InAs heterojunction.…”

Section: Characterization Of T2sl Materialsmentioning

confidence: 99%

InAs/GaSb Type-II Superlattice Detectors

Plis

2014

Advances in Electronics

106

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InAs/(In,Ga)Sb type-II strained layer superlattices (T2SLs) have made significant progress since they were first proposed as an infrared (IR) sensing material more than three decades ago. Numerous theoretically predicted advantages that T2SL offers over present-day detection technologies, heterojunction engineering capabilities, and technological preferences make T2SL technology promising candidate for the realization of high performance IR imagers. Despite concentrated efforts of many research groups, the T2SLs have not revealed full potential yet. This paper attempts to provide a comprehensive review of the current status of T2SL detectors and discusses origins of T2SL device performance degradation, in particular, surface and bulk dark-current components. Various approaches of dark current reduction with their pros and cons are presented.

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“…The quality and thickness of the InSb interface play a vital role in the achievement of high-quality growth and the strain balance of superlattices. [23] Liu et al [24] reported a migration-enhanced epitaxy (MEE) method for the growth of the InSb layer of long wavelength InAs/GaSb T2SLs. Li et al [25] introduced an MEE strategy for tuning strain by optimizing the InSb interface in the very long wavelength range.…”

Section: Introductionmentioning

confidence: 99%

Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

Liu¹,

Zhu²,

Zheng³

et al. 2022

Chinese Phys. B

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We systematically investigate the influence of InSb interface (IF) engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-II superlattices (T2SLs). The type II superlattice structure is 120 periods InAs (8 ML)/GaSb (6 ML) with different thicknesses of InSb interface grown by molecular beam epitaxy (MBE). The high-resolution X-ray diffraction (XRD) curves display the sharp satellite peaks, and the narrow full width at half maximum (FWHM) of the 0th are only 30-39 arcsecends. From the high-resolution cross-sectional transmission electron microscopy (HRTEM) characterization, the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively distinguished. As the InSb interface thickness increases, the compressive strain increases, and the surface "bright spots" appear to be more apparent from Atomic force microscopy (AFM) results. Also, photoluminescence (PL) measurements verifies that with the increase of the strain, the bandgap of the superlattice narrows. By optimizing the InSb interface, a high quality crystal with a well-defined surface and interface is obtained, with a PL wavelength of 4.78 um, which can be used for mid-wave infrared (MWIR) detection.

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Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

Cited by 13 publications

References 15 publications

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices

InAs/GaSb Type-II Superlattice Detectors

Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

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