1995
DOI: 10.1103/physrevb.51.11209
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Interface exciton magnetic polaron in ZnSe/Zn1xMn

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Cited by 19 publications
(14 citation statements)
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“…This enables one to study in detail the dependence on such a tuning parameter of, for example, interwell coupling or tunneling processes of carriers and excitons in one and the same sample. [1][2][3][4][5] Another point of intensive discussion is the energytransfer mechanism from band or exciton states into the internal transitions of transition metals ͑TM's͒ or rare earths ͑RE's͒. This mechanism of the energy transfer is an essential question not only for doped II-VI semiconductors but also for other systems like Er-doped Si or SiO 2 as well as III-V semiconductors doped by TM or RE ions where dipole forbidden internal transitions can be effectively excited via band states.…”
Section: Introductionmentioning
confidence: 99%
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“…This enables one to study in detail the dependence on such a tuning parameter of, for example, interwell coupling or tunneling processes of carriers and excitons in one and the same sample. [1][2][3][4][5] Another point of intensive discussion is the energytransfer mechanism from band or exciton states into the internal transitions of transition metals ͑TM's͒ or rare earths ͑RE's͒. This mechanism of the energy transfer is an essential question not only for doped II-VI semiconductors but also for other systems like Er-doped Si or SiO 2 as well as III-V semiconductors doped by TM or RE ions where dipole forbidden internal transitions can be effectively excited via band states.…”
Section: Introductionmentioning
confidence: 99%
“…The 6 S ground state of the free Mn 2ϩ ion ͑which according to Hund's rule has all five electron spins aligned parallel giving rise to a total spin Sϭ 5 2 ) is shifted down in energy by the crystal field and is referred to as 6 A 1 . The first excited quartet state 4 G of the free ion is split into four states which with increasing energy are labeled according to the irreducible representation of T d symmetry by 4 T 1 , 4 T 2 , 4 A 1 , and 4 E ͑all having a total spin of Sϭ 3 2 ). In wide gap ͑Cd,Mn͒ and ͑Zn,Mn͒ chalcogenide alloys the effective energy transfer is manifested by a broad orange luminescence band due to the transition from 4 T 1 first excited state to the 6 A 1 ground state of the Mn 3d shell which is observed in addition to, or even instead of, the excitonic emission.…”
Section: Introductionmentioning
confidence: 99%
“…Zn 1Ϫx Mn x Se/ZnSe heterostructures have been fabricated by molecular-beam epitaxy and investigated by several groups. [11][12][13][14][15][16] Due to the band-gap bowing of Zn 1Ϫx Mn x Se, 17 this material in combination with ZnSe serves as a quantum well for xϽ0.04 and as barriers for xϾ0.04. However for xϽ0.04 the confinement potentials for carriers are rather small.…”
Section: Introductionmentioning
confidence: 99%
“…[9][10][11][12] However the question of localization of the polaron at or near the QW interface, i.e., a spontaneous symmetry breaking of the exciton wave function, is still a matter of debate. 8,10,11 Experimental evidence of interface-localized magnetic polarons exists in ZnSe/Zn 1Ϫx Mn x Se quantum wells 13 and in wide CdTe/ Cd 1Ϫx Mn x Te quantum wells. 14 However in the former system the magnetic polaron ͑MP͒ formation is initiated by a type-I-type-II transition of the heavy hole, 13 while in the latter system it arises from impurities located near the interface.…”
Section: Introductionmentioning
confidence: 99%
“…8,10,11 Experimental evidence of interface-localized magnetic polarons exists in ZnSe/Zn 1Ϫx Mn x Se quantum wells 13 and in wide CdTe/ Cd 1Ϫx Mn x Te quantum wells. 14 However in the former system the magnetic polaron ͑MP͒ formation is initiated by a type-I-type-II transition of the heavy hole, 13 while in the latter system it arises from impurities located near the interface. 14 Direct experimental evidence of interface-bound MP's in thin CdTe/Cd 1Ϫx Mn x Te quantum wells has so far remained elusive.…”
Section: Introductionmentioning
confidence: 99%